Provided is a composition for etching polymeric materials comprising an aqueous solution including an alkali metal salt and glycine.

The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N are linked; and a silicon etching method which uses this silicon etching liquid. ##STR00001## (In general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the above-described silicon etching liquid, high etching rate can be achieved without lowering the etching rate of silicon and stability of the etching liquid is not impaired even in cases where copper is present in the etching liquid and/or where copper ions are dissolved in the etching liquid.

The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N are linked; and a silicon etching method which uses this silicon etching liquid. ##STR00001## (In general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the above-described silicon etching liquid, high etching rate can be achieved without lowering the etching rate of silicon and stability of the etching liquid is not impaired even in cases where copper is present in the etching liquid and/or where copper ions are dissolved in the etching liquid.

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH.sub.4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH.sub.4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Embodiments including methods of treating a subterranean formation comprising providing a solvent-based treatment fluid comprising a liquid resin agent, wherein the liquid resin agent comprises the reaction product of a multifunctional electrophilic compound comprising at least two electrophilic reactive groups and at least one nucleophilic compound selected from the group consisting of a dimer acid; a dimer diamine; any derivative thereof; and any combination thereof, and wherein the multifunctional electrophilic compound comprises at least two electrophilic reactive groups; introducing the solvent-based treatment fluid into the subterranean formation; and curing the liquid resin agent.

A structure including a hollow porous material with an architected fluid interface to the hollow porous material and methods of forming the same. The architected fluid interface may be in the form of a manifold with tapered openings, each providing a gradually narrowing transition to the hollow channels within which fluid may flow through the hollow porous material. The material may be formed by forming an open-celled sacrificial scaffold, immersing one surface of the open-celled sacrificial scaffold in a bonding agent, attaching a face sheet to the surface to form a sacrificial scaffold assembly, coating the assembly with a coating material, and removing the sacrificial scaffold assembly.

A structure including a hollow porous material with an architected fluid interface to the hollow porous material and methods of forming the same. The architected fluid interface may be in the form of a manifold with tapered openings, each providing a gradually narrowing transition to the hollow channels within which fluid may flow through the hollow porous material. The material may be formed by forming an open-celled sacrificial scaffold, immersing one surface of the open-celled sacrificial scaffold in a bonding agent, attaching a face sheet to the surface to form a sacrificial scaffold assembly, coating the assembly with a coating material, and removing the sacrificial scaffold assembly.

An object of the present invention is to provide a composition for manufacturing a semiconductor, which is capable of selectively removing silicon in a case of being applied to an object to be treated containing silicon-germanium and silicon; a method for treating an object to be treated using the composition for manufacturing a semiconductor; and a method for manufacturing a semiconductor element using the composition for manufacturing a semiconductor.

The composition for manufacturing a semiconductor according to the present invention is a composition which includes a specific compound having two or more sulfur atoms and one or more heteroatoms other than a sulfur atom, an organic solvent, and water, and is alkaline.

An object of the present invention is to provide a composition for manufacturing a semiconductor, which is capable of selectively removing silicon in a case of being applied to an object to be treated containing silicon-germanium and silicon; a method for treating an object to be treated using the composition for manufacturing a semiconductor; and a method for manufacturing a semiconductor element using the composition for manufacturing a semiconductor.

The composition for manufacturing a semiconductor according to the present invention is a composition which includes a specific compound having two or more sulfur atoms and one or more heteroatoms other than a sulfur atom, an organic solvent, and water, and is alkaline.