A method for selectively removing an aluminum-silicon coating fired on a surface of a metallic structure is described. The method includes the step of contacting the coating with molten potassium hydroxide (KOH), under conditions sufficient to remove the coating without substantially affecting the metallic surface. Methods for preparing a magnetic component are also described. They involve masking pre-selected regions of the surface of the component, using an aluminum-silicon coating that is fired onto the surface, prior to a nitriding step. The coating is then removed according to the procedure outlined herein.

The present invention relates to an alkaline etching agent for treating a surface of a semiconductor substrate for solar cells, containing at least one hydroxystyrene polymer represented by the general formula (1) and an alkaline agent. According to the present invention, some effects are exhibited that the texture formation is made possible to a semiconductor substrate for solar cells at relatively lower temperatures with a shorter amount of time, thereby having excellent productivity.

The present invention relates to an alkaline etching agent for treating a surface of a semiconductor substrate for solar cells, containing at least one hydroxystyrene polymer represented by the general formula (1) and an alkaline agent. According to the present invention, some effects are exhibited that the texture formation is made possible to a semiconductor substrate for solar cells at relatively lower temperatures with a shorter amount of time, thereby having excellent productivity.

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO.sub.2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO.sub.2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

An etchant composition, a tackifier, an alkaline solution, a method of removing polyimide and an etching process are provided. The etchant composition includes a tackifier (A) and an alkaline solution (B). The tackifier (A) includes a resin containing a hydroxyl group (a), a surfactant (b) and a first solvent (c1). The alkaline solution (B) includes an alkaline compound (d) and a second solvent (c2).

An etchant composition, a tackifier, an alkaline solution, a method of removing polyimide and an etching process are provided. The etchant composition includes a tackifier (A) and an alkaline solution (B). The tackifier (A) includes a resin containing a hydroxyl group (a), a surfactant (b) and a first solvent (c1). The alkaline solution (B) includes an alkaline compound (d) and a second solvent (c2).

An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.

An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.

The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 Å/min, while minimizing etch rates of dielectrics (<2 Å/min).