A peptide, including: a first peptide fragment including (KG).sub.n or (GK).sub.n where n is an integer between 2 and 5, K represents a lysine residue, and G represents a glycine residue; a second peptide fragment including an identification sequence; and a first connection peptide including 1-2 glycine residues. The first connection peptide is disposed between the first peptide fragment and the second peptide fragment.

A display device includes: a substrate; a plurality of pixels on the substrate, and each of the pixels including first to third sub-pixels each including at least one light emitting diode configured to emit light; and a color conversion layer including first to third color conversion patterns respectively corresponding to the first to third sub-pixels, each of the first to third color conversion patterns configured to transmit the light or convert the light into light of a different color. The light emitting diode of each of the first to third sub-pixels is coupled to a first electrode and a second electrode. At least one of the first to third color conversion patterns includes a perovskite compound.

The present application discloses a composite light-emitting material, a production method thereof, and use thereof, wherein the composite light-emitting material has a perovskite nanomaterial and a matrix; the perovskite nanomaterial comprises γ-CsPbI.sub.3 and an addition element M; and the addition element M is selected from at least one of Li, Na, K, and Rb.

A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

Provided is an organic metal complex having a structure represented by the following general formula (1):
ML.sub.mL′.sub.n  (1)
where: M represents a metal atom selected from Ir, Pt, Rh, Os, and Zn; L and L′, which are different from each other, each represent a bidentate ligand; m represents an integer of 1 to 3 and n represents an integer of 0 to 2, provided that m+n is 3; a partial structure ML.sub.m represents a structure represented by the following general formula (2): ##STR00001##
and a partial structure ML′.sub.n represents a structure including a monovalent bidentate ligand.

A light emitting element ink and a method of manufacturing a display device are provided. The light emitting element ink includes a light emitting element solvent, a light emitting element dispersed in the light emitting element solvent, the light emitting element including a plurality of semiconductor layers and an insulating film surrounding outer surfaces of the semiconductor layers, a thickener dispersed in the light emitting element solvent, wherein a compound of the thickener includes a functional group capable of forming a hydrogen bond together with a compound of the light emitting element solvent or another compound of the thickener and the compound of the thickener is represented by Chemical Formula 1.

There is provided a method of preparing a synchronized piezoelectric and luminescence material. The method includes mixing a solution (a) including light-emitting particles or precursors thereof and a solution (b) including ligands having a piezoelectric property in a polar solvent; and optionally, mixing a solution (c) including ligands having a piezoelectric property in an antisolvent together with the solution (a) and the solution (b), if necessary.

The present disclosure discloses a quantum dot light emitting device, a preparation method therefor and a display apparatus. In the present disclosure, at least one of one or more layers of light emitting functional layers is disposed to include at least two sub-function layers, the sub-function layers comprise ligands, and surface energies of the ligands corresponding to sub-function layers change in gradient along a transmission direction of carriers in the sub-function layers, so that energy levels of the sub-function layers change in gradient. In this way, the energy levels of the sub-function layers can be matched with the energy levels of the adjacent light emitting function layers, so that carrier transmission and balance as well as device efficiency can be improved.

The present invention relates to a color conversion device (100).

The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.