A cleaning composition includes an alcohol solvent and alloy particles. A content of the alloy particles is greater than 0 and 1 ppb or less based on a total weight of the composition. The alloy particles suppress the generation of impurities such as aldehyde and ketone, thereby reducing an occurrence of defects in manufacturing processes of semiconductor and display and improving yields.

A method of cleaning residue containing ruthenium (Ru) residue on at least one surface of a component of a semiconductor processing chamber is provided. The residue is exposed to a Ru cleaning composition comprising at least one of hypochlorite and O.sub.3 based chemistries, wherein the Ru cleaning composition removes the Ru residue.