Patent classifications
C11D7/02
Composition, composition reservoir, and method for producing composition
A composition including hydrogen peroxide is provided, which can be used for semiconductor device manufacturing and which exhibits an excellent storage stability and has a reduced effect of defects on a semiconductor substrate. Further, a method is provided for producing the composition including hydrogen peroxide, and a composition reservoir for storing the composition. The composition includes hydrogen peroxide, an acid, and an Fe component, in which the content of the Fe component is 10.sup.−5 to 10.sup.2 in terms of mass ratio with respect to the content of the acid.
Hunting scent eliminator
A human odor eliminating composition is described having as ingredients silver water, zeolite, activated carbon and ozone and optionally sodium bicarbonate. The composition can be used as a concentrate or diluted with water for various applications, such as a spray, wipes, or liquid use. The composition can also be a dry powder. It can be used as an additive in soaps, detergents, hand sanitizers, and even on hunting equipment such as tents, gun cases, bags and more.
Nail polish removing composition
The invention relates to compositions for removing nail polish comprising a solvent and a high load of colorant, preferably between 0.5 wt % and 5.0 wt %. Preferably, the composition has an absorption peak in a range between 460 nm and 600 nm, and a normalized extinction of at least 0.5 for at least one wavelength in the range when measured in an optically transparent solvent via spectrophotometer and across 1 cm path length in a ratio of 1:8 composition to optically transparent solvent. Methods of removing nail polish are also provided.
COMPOSITION COMPRISING AN AMMONIA-ACTIVATED SILOXANE FOR AVOIDING PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW
Described herein is a non-aqueous composition including (a) an organic protic solvent, (b) ammonia, and (c) at least one additive of formulae I or II
##STR00001## where R.sup.1 is H R.sup.2 is selected from H, C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.3 is selected from R.sup.2, R.sup.4 is selected from C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.10, R.sup.12 are independently selected from C.sub.1 to C.sub.10 alkyl and C.sub.1 to C.sub.10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.
COMPOSITION COMPRISING AN AMMONIA-ACTIVATED SILOXANE FOR AVOIDING PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW
Described herein is a non-aqueous composition including (a) an organic protic solvent, (b) ammonia, and (c) at least one additive of formulae I or II
##STR00001## where R.sup.1 is H R.sup.2 is selected from H, C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.3 is selected from R.sup.2, R.sup.4 is selected from C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.10, R.sup.12 are independently selected from C.sub.1 to C.sub.10 alkyl and C.sub.1 to C.sub.10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.
Chemical liquid, chemical liquid container, and method for treating substrate
The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.
Treatment liquid, method for washing substrate, and method for removing resist
A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10.sup.−10 to 1.0×10.sup.−4.
Treatment liquid, method for washing substrate, and method for removing resist
A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10.sup.−10 to 1.0×10.sup.−4.
COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
The present invention provides a means capable of improving a residue removing effect and improving storage stability in a composition for surface treatment which is used for reducing residues on a surface of an object to be polished after being polished chemical mechanical polishing. The present invention relates to a composition for surface treatment, wherein the composition contains a solvent and a dissolved gas, a concentration of the dissolved gas is 0.01 mg/L or more and 10 mg/L or less with respect to a total volume of the composition and the composition is used for reducing residues on a surface of an object to be polished after being polished by chemical mechanical polishing.
COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
The present invention provides a means capable of improving a residue removing effect and improving storage stability in a composition for surface treatment which is used for reducing residues on a surface of an object to be polished after being polished chemical mechanical polishing. The present invention relates to a composition for surface treatment, wherein the composition contains a solvent and a dissolved gas, a concentration of the dissolved gas is 0.01 mg/L or more and 10 mg/L or less with respect to a total volume of the composition and the composition is used for reducing residues on a surface of an object to be polished after being polished by chemical mechanical polishing.