A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP.

The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.

The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP.

The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.

The present invention provides a treatment liquid which is excellent in anticorrosion properties for molybdenum and excellent in defect removability on an object to be treated, in a case of being applied to cleaning of the object to be treated, which contains a molybdenum-containing substance and has been subjected to chemical mechanical polishing treatment. In addition, the present invention provides a cleaning method for an object to be treated, using the above-described treatment liquid, and a method for manufacturing an electronic device. The treatment liquid of the present invention is used for cleaning an object to be treated, which contains a molybdenum-containing substance and has been subjected to chemical mechanical polishing, the treatment liquid containing a polymer having a sulfonic acid group or a salt thereof, and water.

A resin composition for cleaning molding machines that achieves both high cleaning power for the material mold-processed before cleaning and easy replacement to the material to be mold-processed after cleaning, improves stable raw material feedability, has metered purging suitability, and has improved workability by suppressing spurt and emission of fume from a molding machine during the cleaning process is provided. To achieve the object, the present disclosure is a resin composition for cleaning molding machines including a thermoplastic resin (A), a synthetic wax (B), and a polyolefin-based resin (C), wherein an absolute value of a difference between solubility parameters of (A) and (B) is 2.0 (cal/cm.sup.3).sup.1/2 or more and 7.0 (cal/cm.sup.3).sup.1/2 or less, a compounding amount of (C) is more than 0.1 mass % and less than 10 mass %, and a glass transition temperature of (C) is higher than 150 C. and lower than 40 C.