The present disclosure relates to compositions comprising 2,3,3,3-tetrafluoropropene that may be useful as heat transfer compositions, aerosol propellants, foaming agents, blowing agents, solvents, cleaning agents, carrier fluids, displacement drying agents, buffing abrasion agents, polymerization media, expansion agents for polyolefins and polyurethane, gaseous dielectrics, extinguishing agents, and fire suppression agents in liquid or gaseous form. Additionally, the present disclosure relates to compositions comprising 1,1,2,3-tetrachloropropene, 2-chloro-3,3,3-trifluoropropene, or 2-chloro-1,1,1,2-tetrafluoropropane, which may be useful in processes to produce 2,3,3,3-tetrafluoropropene.

A cleaning and protectant composition and a method for using the composition on an article such as a touch screen or screen protector for a mobile device, computer, or other electronic device. The composition comprises a polymeric film former. The polymeric film former is an oxazoline homopolymer or an extended or a modified polymer based on an oxazoline homopolymer. The polymeric film former forms a retention coating to retain components within the composition for an extended period of time. The composition is also present in a kit with an application device.

A cleaning and protectant composition and a method for using the composition on an article such as a touch screen or screen protector for a mobile device, computer, or other electronic device. The composition comprises a polymeric film former. The polymeric film former is an oxazoline homopolymer or an extended or a modified polymer based on an oxazoline homopolymer. The polymeric film former forms a retention coating to retain components within the composition for an extended period of time. The composition is also present in a kit with an application device.

A composition comprising: (a) a leuco composition; and (b) a stabilizing amount of an antioxidant composition. The antioxidant composition comprises at least one sterically hindered phenol and at least one substituted diarylamine, and the mole ratio of the hindered phenol to the substituted diarylamine is greater than 1:1. In another embodiment, a composition comprises (a) a leuco composition and (b) an antioxidant composition; and optionally (c) a solvent composition. The combined mass of the leuco compounds and antioxidants present in the composition is 10% or more of the total mass of the composition, and (b) the molar ratio of antioxidants present in the composition to leuco compounds present in the composition is greater than 1:1.

A solvent composition has an oxygenated solvent and a siloxane solvent. In one embodiment, the oxygenated solvent is propylene glycol methyl ether and the siloxane solvent is hexamethyldisiloxane or octamethyltrisiloxane. In another embodiment, the solvent composition is an azeotrope of propylene glycol n-butyl ether and decamethyltetrasiloxane. The siloxane solvent can be used in any situation where one desires to remove a silicone deposit, e.g., conformal coatings, adhesives, sealants, greases, heat transfer fluids, paints, oils, etc.

A method for removing polymerized soil by adding to the soil a composition which includes: (a) from 4 to 30 wt % of a hydroxide or alkoxide, (b) from 10 to 96 wt % of a C.sub.1-C.sub.12 primary alcohol; and (c) from 0 to 75 wt % of an organic solvent which is not a C.sub.1-C.sub.12 primary alcohol; wherein the composition contains no more than 40 wt % water.

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).

A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention is a substrate cleaning solution comprising a polymer (A), an alkaline component (B), and a solvent (C), provided that the alkaline component (B) does not comprise ammonia.

A composition including a compound having structural formula (I): R.sub.f is a linear or branched perfluoroalkyl group having 1-3 atoms; n is 0-2; x is 1-3; and R.sub.f′ and R.sub.f″ are (i) independently, a linear or branched perfluoroalkyl group having 1-8 carbon atoms; or (ii) are bonded together to form a ring structure having 4-8 carbon atoms. The composition further includes a hydrocarbon contaminant.

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