Disclosed herein is a decontaminant aqueous solution for decontaminating diisocyanate drum, including 20-97 wt % of at least one alcohol or derivative thereof, based on the total weight of decontaminant aqueous solution, and an alkaline source in an amount effective to provide the solution a pH of at least 8. Further disclosed herein is a method for decontaminating diisocyanate residues in an emptied drum with the decontaminant aqueous solution.

Provided are a cleaning agent and a preparation method and the use thereof. The cleaning agent is prepared from the following raw materials comprising the following mass fraction of components: 0.5%-20% of an oxidant containing iodine, 0.5%-20% of an etchant containing boron, 1%-50% of a pyrrolidinone solvent, 1%-20% of a corrosion inhibitor, 0.01%-5% of a metal ion-free surfactant, and water, with the sum of the mass fraction of each component being 100%, the pH of the cleaning agent is 7.5-13.5, and the corrosion inhibitor is one or more of a benzotriazole corrosion inhibitor, a hydrazone corrosion inhibitor, a carbazone corrosion inhibitor and a thiocarbohydrazone corrosion inhibitor. The cleaning agent can efficiently remove nitrides from hard mask residues with little effects on metals and low-κ dielectric materials, and has a good selectivity.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.

A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.

An automotive surface is cleaned by applying an effective amount of a cleaning composition comprising a) at least one hydrocarbon solvent in an amount from about 3 weight percent to about 20 weight percent of the composition, b) at least one thickener/rheology modifier in an amount from about 0.01 weight percent to about 3 weight percent, c) at least one silicone fluid has a viscosity ranging from about 500 to about 20,000 centistokes at 25° C., present in an amount from about 0.1 weight percent to about 3 weight percent, d) at least one wetting agent in an amount from about 0.001 to about 2%, e) at least one hydrophobic additive in an amount from about 0.1 to about 3%, and f) water in an amount from about 60 weight percent to about 85 weight percent to the automotive surface with an application implement.

A cleaning composition which is used for cleaning a coating film forming device, the composition including an acid component having a pKa of 12 or less.

An azeotropic composition a formulated with 1,1,1,3,3,3,-hexafluoro-2-methoxypropane and a second component selected from the group consisting of isopropyl alcohol, ethanol, methanol, and trans-1,2-dichloroethylene. The azeotropic composition exhibits a substantially constant boiling point at a constant pressure and is useful for various cleaning and degreasing applications.