Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

A composition comprising: (i) 1,1-difluoroethene (vinylidene fluoride, R-1132a); (ii) carbon dioxide (CO.sub.2, R-744); (iii) pentafluoroethane (R-125); and (iv) one or more of trifluoromethane (R-23) and hexafluoroethane (R-116).

A method for inhibiting a flash point of trans-1,2-dichloroethylene (T-1,2-DCE) and a use of T-1,2-DCE are provided. The T-1,2-DCE has an excellent cleaning effect and is environmental friendly but cannot be used alone because of huge safety hazard caused by its low flash point. 1-chloro-3,3,3-trifluoropropene (HCFO-1233zd) is used to inhibit the flash point of T-1,2-DCE. However, because the actual boiling points of these two substances are quite different, the two substances are easily separated at a slightly-high ambient temperature. Because a boiling point of HCFO-1233zd is extremely low, HCFO-1233zd will escape rapidly, resulting in the loss of inhibition on the flash point. In the present disclosure, T-1,2-DCE and 1-chloro-2,3,3-trifluoropropene are mixed to prepare a mixed solution, and the mixed solution can effectively maintain the inhibition on the flash point of T-1,2-DCE in various ambient temperatures, such that the T-1,2-DCE can be heated to generate a steam for cleaning.

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L.sup.1 and L.sup.2 represents a C2 to C4 alkyl group, and L.sup.3 represents O or S) in an amount of 80 mass % or more.

L.sup.1-L.sup.3-L.sup.2(L)

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

A method for inhibiting a flash point of trans-1,2-dichloroethylene (T-1,2-DCE) and a use of T-1,2-DCE are provided. The T-1,2-DCE has an excellent cleaning effect and is environmental friendly but cannot be used alone because of huge safety hazard caused by its low flash point. 1-chloro-3,3,3-trifluoropropene (HCFO-1233zd) is used to inhibit the flash point of T-1,2-DCE. However, because the actual boiling points of these two substances are quite different, the two substances are easily separated at a slightly-high ambient temperature. Because a boiling point of HCFO-1233zd is extremely low, HCFO-1233zd will escape rapidly, resulting in the loss of inhibition on the flash point. In the present disclosure, T-1,2-DCE and 1-chloro-2,3,3-trifluoropropene are mixed to prepare a mixed solution, and the mixed solution can effectively maintain the inhibition on the flash point of T-1,2-DCE in various ambient temperatures, such that the T-1,2-DCE can be heated to generate a steam for cleaning.

A method of making chlorofluorohydrocarbons including, contacting, a fluorinated hydrocarbon reagent in the vapor phase, with hydrogen chloride (HCl). The reaction is conducted in the presence of an effective amount of a catalyst, at an elevated temperature sufficient to effect hydrochlorination to form a reaction mixture including a chlorofluorohydrocarbon.

A method for cleaning a substrate includes the following: exposing the substrate to a cleaning agent to remove impurities on a surface of the substrate; exposing the substrate to a dewetting chemical agent in a liquid phase to remove the cleaning agent on the surface of the substrate; solidifying the dewetting chemical agent in the liquid phase remaining on the surface of the substrate to obtain the dewetting chemical agent in a solid phase; and sublimating and removing the dewetting chemical agent in the solid phase.