A composition may be or include detergents, cleaning agents, and cosmetic agents and include an emulsifier and biodegradable microcapsules. The biodegradable microcapsules may include a core material and a shell where the shell consists of at least one barrier layer and a stability layer. The barrier layer may surround the core material. The stability layer may include at least one biopolymer and be arranged on the outer surface of the barrier layer(s).

A composition may be or include detergents, cleaning agents, and cosmetic agents and include an emulsifier and biodegradable microcapsules. The biodegradable microcapsules may include a core material and a shell where the shell consists of at least one barrier layer and a stability layer. The barrier layer may surround the core material. The stability layer may include at least one biopolymer and be arranged on the outer surface of the barrier layer(s).

A hand dishwashing detergent composition includes from 5.0% to 50% of a surfactant system by weight of the liquid hand dishwashing detergent composition. The surfactant system includes an anionic surfactant. The anionic surfactant includes an alkyl sulfate anionic surfactant and glyceryl acetal sulfate surfactant. The glyceryl acetal sulfate surfactant is selected from glyceryl acetal sulfate having the formula I or formula II or salts thereof, and mixtures thereof.

A hand dishwashing detergent composition includes from 5.0% to 50% of a surfactant system by weight of the liquid hand dishwashing detergent composition. The surfactant system includes an anionic surfactant. The anionic surfactant includes an alkyl sulfate anionic surfactant and glyceryl acetal sulfate surfactant. The glyceryl acetal sulfate surfactant is selected from glyceryl acetal sulfate having the formula I or formula II or salts thereof, and mixtures thereof.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue and photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from between a material that contains 10 atom % or more of titanium and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains: 0.002-50 mass % of at least one type of oxidizing agent selected from among a peroxide, perchloric acid, and a perchlorate salt; 0.000001-5 mass % of an alkaline earth metal compound; and water.

Provided are a cleaning agent and a cleaning liquid that prevent a reduction in the rejection rate of an RO membrane which may occur when the RO membrane is cleaned and a method for cleaning an RO membrane with the cleaning liquid. The agent for cleaning an RO membrane includes a urea derivative. The urea derivative preferably includes urea (H.sub.2N—CO—NH.sub.2) and/or biuret (H.sub.2N—CO—NH—CO—NH.sub.2). The cleaning liquid is an aqueous solution produced by diluting the cleaning agent. The method for cleaning an RO membrane uses the cleaning liquid. Urea and biuret have a structure analogous to amide bonds included in aromatic polyamide RO membranes, and have a strong affinity for amide bond portions. Urea and biuret adsorb onto the amide bond portions, and prevent the amide bonds from being broken by the cleaning liquid.

Provided are a cleaning agent and a cleaning liquid that prevent a reduction in the rejection rate of an RO membrane which may occur when the RO membrane is cleaned and a method for cleaning an RO membrane with the cleaning liquid. The agent for cleaning an RO membrane includes a urea derivative. The urea derivative preferably includes urea (H.sub.2N—CO—NH.sub.2) and/or biuret (H.sub.2N—CO—NH—CO—NH.sub.2). The cleaning liquid is an aqueous solution produced by diluting the cleaning agent. The method for cleaning an RO membrane uses the cleaning liquid. Urea and biuret have a structure analogous to amide bonds included in aromatic polyamide RO membranes, and have a strong affinity for amide bond portions. Urea and biuret adsorb onto the amide bond portions, and prevent the amide bonds from being broken by the cleaning liquid.

According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

An illuminating soap module includes a shell defining a cavity for holding liquid soap. The shell may include one or more openings. The one or more openings may include a dispenser, a plug, a light module, and combinations thereof. The illuminating soap module is configured to illuminate upon a triggering event.

An illuminating soap module includes a shell defining a cavity for holding liquid soap. The shell may include one or more openings. The one or more openings may include a dispenser, a plug, a light module, and combinations thereof. The illuminating soap module is configured to illuminate upon a triggering event.