The present invention relates to a cleaning liquid, in particular a cleaning liquid for cleaning surfaces and/or for sanitising water.

The present invention relates to a cleaning liquid, in particular a cleaning liquid for cleaning surfaces and/or for sanitising water.

The present invention relates to a cleaning liquid, in particular a cleaning liquid for cleaning surfaces and/or for sanitising water.

The present invention relates to a cleaning liquid, in particular a cleaning liquid for cleaning surfaces and/or for sanitizing water.

The present invention relates to a cleaning liquid, in particular a cleaning liquid for cleaning surfaces and/or for sanitizing water.

The present invention relates to a cleaning liquid, in particular a cleaning liquid for cleaning surfaces and/or for sanitizing water.

An antimicrobial mixture is disclosed, comprising: (a) a first antimicrobial agent selected from acetophenone derivatives of formula (I)

##STR00001## in which R.sub.1 is hydrogen or methyl, and R.sub.2 is hydrogen, hydroxyl, a OCH3 group, or a cosmetically or pharmaceutically acceptable salt thereof; and (b) a second antimicrobial agent selected from organic acids of undecylenic acid, 2,4-hexadienoic acid, anisic acid, benzoic acid and esters thereof, para-hydroxybenzoic acid and esters thereof, caprylhydroxamic acid, dehydracetic acid, levulinic acid, perillic acid, propionic acid, salicylic acid, sorbohydroxamic acid, sorbic acid, hydroxymethylaminoactic acid, cinnamic acid, 2-butyloctanoic acid, glyceryl caprylic acid and esters thereof, salts of the aforementioned organic acids, or mixtures thereof.

An antimicrobial mixture is disclosed, comprising: (a) a first antimicrobial agent selected from acetophenone derivatives of formula (I)

##STR00001## in which R.sub.1 is hydrogen or methyl, and R.sub.2 is hydrogen, hydroxyl, a OCH3 group, or a cosmetically or pharmaceutically acceptable salt thereof; and (b) a second antimicrobial agent selected from organic acids of undecylenic acid, 2,4-hexadienoic acid, anisic acid, benzoic acid and esters thereof, para-hydroxybenzoic acid and esters thereof, caprylhydroxamic acid, dehydracetic acid, levulinic acid, perillic acid, propionic acid, salicylic acid, sorbohydroxamic acid, sorbic acid, hydroxymethylaminoactic acid, cinnamic acid, 2-butyloctanoic acid, glyceryl caprylic acid and esters thereof, salts of the aforementioned organic acids, or mixtures thereof.

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3: ##STR00001##

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3: ##STR00001##