C22C5/02

ELECTRODES FOR BIOSENSORS
20220349028 · 2022-11-03 ·

The present disclosure relates to an electrode for measuring an analyte. The electrode includes a first base layer, a first electrode layer upon the first base layer, and a second base layer. The first electrode layer is arranged between the first base layer and the second base layer. The first base layer includes a conductive metal, a conductive metal alloy, or carbon. The first electrode layer includes ruthenium metal, a ruthenium based metal alloy, nickel metal, or a nickel based metal alloy. The first base layer is made of different elements than the first electrode layer. The first base layer is more conductive than the first electrode layer.

CATHODE MEMBER FOR ELECTRON BEAM GENERATION, AND METHOD FOR MANUFACTURING THE SAME

The cathode member for electron beam generation of the present disclosure includes: 95% by area or more of a single phase or two phases of a compound composed of iridium and cerium. A total content of one or more subcomponents of metallic iridium and an oxide of one or more elements of iridium and cerium is 5% by area or less of the cathode member.

GOLD SPUTTERING TARGET

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.

Manufacturing method of integrated circuit packaging structure

A manufacturing method of an integrated circuit (IC) packaging structure includes the following steps. One or a plurality of dies is disposed on a packaging substrate. An encapsulation material is formed on the packaging substrate. The encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate. At least one trench is formed in the encapsulation material. A heat dissipation structure is formed on the encapsulation material, and at least a part of the heat dissipation structure is formed in the at least one trench. The step of forming the heat dissipation structure includes the following steps. A first slurry is formed in the at least one trench, and a first curing process is performed to the first slurry for forming a first portion of the heat dissipation structure.

GOLD SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
20230120540 · 2023-04-20 ·

A gold sputtering target has a gold purity of 99.999% or more. In such a gold sputtering target, an average value of Vickers hardness is 20 or more and less than 40, an average crystal grain size is 15 μm or more and 200 μm or less, and a {110} plane of gold is preferentially oriented to a surface to be sputtered of the gold sputtering target.

Tarnish and sweat resistant low karat gold alloys

This invention provides low karat, low silver, 6 kt gold-copper-zinc alloys with acceptable workability that can be processed into wire, tube, sheet stock, or cast. The alloys are annealed at 1200° F., rapidly cooled, and heat treated at about 600° to 800° F., which increases the hardness and durability in finished parts made from these alloys. The alloys include grain refiners. The alloys are resistant to oxidation from sweat and tarnishing. Additional fabrication operations can form jewelry items such as balls, chain, hoops and studs.

Tarnish and sweat resistant low karat gold alloys

This invention provides low karat, low silver, 6 kt gold-copper-zinc alloys with acceptable workability that can be processed into wire, tube, sheet stock, or cast. The alloys are annealed at 1200° F., rapidly cooled, and heat treated at about 600° to 800° F., which increases the hardness and durability in finished parts made from these alloys. The alloys include grain refiners. The alloys are resistant to oxidation from sweat and tarnishing. Additional fabrication operations can form jewelry items such as balls, chain, hoops and studs.

Embolization coil and method for producing embolization coil

The present invention is an embolization coil having an optimum morphological stability. The embolization coil includes a wire material made of an Au—Pt alloy. The wire material constituting the embolization coil has such a composition that a Pt concentration is 24 mass % or more and less than 34 mass %, with the balance being Au. The wire material has such a material structure that a Pt-rich phase of an Au—Pt alloy having a Pt concentration of 1.2 to 3.8 times a Pt concentration of an α phase is distributed in an α phase matrix. The wire material has a bulk susceptibility of −13 ppm or more and −5 ppm or less. In a material structure of a transverse cross-section of the wire material, an average value of two or more average crystal particle diameters measured by a linear intercept method is 0.20 μm or more and 0.35 μm or less.

Embolization coil and method for producing embolization coil

The present invention is an embolization coil having an optimum morphological stability. The embolization coil includes a wire material made of an Au—Pt alloy. The wire material constituting the embolization coil has such a composition that a Pt concentration is 24 mass % or more and less than 34 mass %, with the balance being Au. The wire material has such a material structure that a Pt-rich phase of an Au—Pt alloy having a Pt concentration of 1.2 to 3.8 times a Pt concentration of an α phase is distributed in an α phase matrix. The wire material has a bulk susceptibility of −13 ppm or more and −5 ppm or less. In a material structure of a transverse cross-section of the wire material, an average value of two or more average crystal particle diameters measured by a linear intercept method is 0.20 μm or more and 0.35 μm or less.

MEDICAL Au-Pt-Pd ALLOY

The present invention relates to a medical Au-Pt-Pd alloy including Au, Pt,Pd, and inevitable impurities. The Au-Pt-Pd alloy has an alloy compositioninside a polygon (A1-A2-A3-A4) surrounded by straight lines connected at pointA1 (Au: 53 atom%, Pt: 4 atom%, and Pd: 43 atom%), point A2 (Au: 70 atom%,Pt: 4 atom%, and Pd: 26 atom%), point A3 (Au: 69.9 atom%, Pt: 30 atom%, and Pd: 0.1 atom%), and point A4 (Au: 49.9 atom%, Pt: 50 atom%, and Pd: 0.1 atom%) in a Au-Pt-Pd ternary state diagram. In a metal structure of the alloy, at least one of a Au-rich phase and a Pt-rich phase is distributed, and the total of the area ratio of the Au-rich phase and the area ratio of the Pt-rich phase is 1.5% or more and 25.4% or less.