Patent classifications
C22C5/04
METHOD FOR PRODUCING A CATALYST SYSTEM FOR GAS REACTIONS
A method for producing a catalyst system for gas reactions comprising at least one planar structure of noble metal having gas-permeable openings, comprising the steps of:
(1) providing at least one noble metal powder consisting of at least substantially spherical noble metal particles, and
(2) repeatedly applying the noble metal powder or powders provided in step (1) in layers to a substrate in a build chamber, respectively followed by an at least partial melting of the respective noble metal powder applied as a layer with high-energy radiation, and allowing the melted noble metal powder to solidify within the scope of additive manufacturing.
Anisotropic nanostructure, production method therefor, and catalyst
This invention provides an anisotropic nanostructure represented by the formula:
Ru.sub.xM.sub.1-x,
wherein 0.6≤x≤0.999, and M represents at least one member selected from the group consisting of Ir, Rh, Pt, Pd, and Au, and wherein Ru and M form a solid solution at the atomic level, and the anisotropic nanostructure has an anisotropic hexagonal close-packed structure (hcp).
METHOD FOR MANUFACTURING PRECIOUS METAL ALLOYS AND PRECIOUS METAL ALLOYS THUS OBTAINED
A method for manufacturing a part by alloying a precious metal with boron, wherein: a quantity of precious metal reduced to powder form is provided; a quantity of a nano-structured micrometric boron powder is provided; the precious metal powder is mixed with the nano-structured micrometric boron powder to obtain a mixture; the mixture is compacted by applying a uniaxial pressure; the mixture is subjected to a spark plasma sintering or flash sintering treatment, or to a hot isostatic pressing (HIP) treatment, to obtain an ingot of a precious metal/boron alloy, and the ingot is machined to obtain the part, or the ingot is reduced to powder form by a micronisation treatment and the powder is treated to obtain the part. Additionally, a gold/boron alloy.
Fe—Co—Al alloy magnetic thin film
An Fe—Co—Al alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The Fe—Co—Al alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The Fe—Co—Al alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth ΔH at 30 GHz of less than 70 Oe.
Fe—Co—Al alloy magnetic thin film
An Fe—Co—Al alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The Fe—Co—Al alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The Fe—Co—Al alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth ΔH at 30 GHz of less than 70 Oe.
Oxidation-Resistant Coated Superalloy
A coating-substrate combination includes: a Ni-based superalloy substrate comprising, by weight percent: 2.0-5.1 Cr; 0.9-3.3 Mo; 3.9-9.8 W; 2.2-6.8 Ta; 5.4-6.5 Al; 1.8-12.8 Co; 2.8-5.8 Re; 2.8-7.2 Ru; and a coating comprising, exclusive of Pt group elements, by weight percent: Ni as a largest content; 5.8-9.3 Al; 4.4-25 Cr; 3.0-13.5 Co; up to 6.0 Ta, if any; up to 6.2 W, if any; up to 2.4 Mo, if any; 0.3-0.6 Hf; 0.1-0.4 Si; up to 0.6 Y, if any; up to 0.4 Zr, if any; up to 1.0 Re, if any.
Oxidation-Resistant Coated Superalloy
A coating-substrate combination includes: a Ni-based superalloy substrate comprising, by weight percent: 2.0-5.1 Cr; 0.9-3.3 Mo; 3.9-9.8 W; 2.2-6.8 Ta; 5.4-6.5 Al; 1.8-12.8 Co; 2.8-5.8 Re; 2.8-7.2 Ru; and a coating comprising, exclusive of Pt group elements, by weight percent: Ni as a largest content; 5.8-9.3 Al; 4.4-25 Cr; 3.0-13.5 Co; up to 6.0 Ta, if any; up to 6.2 W, if any; up to 2.4 Mo, if any; 0.3-0.6 Hf; 0.1-0.4 Si; up to 0.6 Y, if any; up to 0.4 Zr, if any; up to 1.0 Re, if any.
Complex concentrated alloys: materials, methods, and techniques for manufacture
Complex concentrated alloys include five or more elements, at least one of which is ruthenium. Example complex concentrated alloys can include nickel and chromium, iron, ruthenium, molybdenum, and/or tungsten. Example complex concentrated alloys have single phase microstructure of face centered cubic (FCC) and can be homogenous. Example complex concentrated alloys can exhibit improved corrosion resistance.
Complex concentrated alloys: materials, methods, and techniques for manufacture
Complex concentrated alloys include five or more elements, at least one of which is ruthenium. Example complex concentrated alloys can include nickel and chromium, iron, ruthenium, molybdenum, and/or tungsten. Example complex concentrated alloys have single phase microstructure of face centered cubic (FCC) and can be homogenous. Example complex concentrated alloys can exhibit improved corrosion resistance.
Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module
A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided between the electrode and the semiconductor.