A timepiece component for a timepiece movement and notably a pivot arbor of a regulating member of a mechanical timepiece movement, made of an alloy containing by weight: between 25% and 55% of palladium, between 25% and 55% of silver, between 10% and 30% of copper, between 0.5% and 5% of zinc, gold and platinum with a total percentage of these two elements comprised between 15% and 25%, between 0% and 1% of one or more elements chosen from among boron and nickel, between 0% and 3% of one or more elements chosen from among rhenium and ruthenium, no more than 0.1% of one or more elements chosen from among iridium, osmium and rhodium, and no more than 0.2% of other impurities, the respective quantities of the components being such that, added together, they do not exceed 100%.

An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.

An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.

A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

Presented is a selective hydrogenation catalyst and a method of making the catalyst. The catalyst comprises a carrier containing bi-metallic nanoparticles. The nanoparticles comprise a silver component and a palladium component. The catalyst is made by incorporating an aqueous dispersion of the bi-metallic nanoparticles onto a catalyst carrier followed by drying and calcining the carrier having incorporated therein the dispersion. The catalyst is used in the selective hydrogenation of highly unsaturated hydrocarbons contained olefin product streams.

A manufacturing method of an integrated circuit (IC) packaging structure includes the following steps. One or a plurality of dies is disposed on a packaging substrate. An encapsulation material is formed on the packaging substrate. The encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate. At least one trench is formed in the encapsulation material. A heat dissipation structure is formed on the encapsulation material, and at least a part of the heat dissipation structure is formed in the at least one trench. The step of forming the heat dissipation structure includes the following steps. A first slurry is formed in the at least one trench, and a first curing process is performed to the first slurry for forming a first portion of the heat dissipation structure.

Provided are a silver jewelry article formed using pure silver, which has high Vickers hardness and prohibit the occurrence of discoloration and its method. Disclosed are a silver jewelry article and its method, wherein the Vickers hardness is adjusted to 60 HV or higher, and when the height of the peak of 2θ=38°±0.2° by an XRD is designated as h1, and that of 2θ=44°±0.4° is designated as h2, h2/h1 is adjusted to 0.2 or greater.

Provided are a silver jewelry article formed using pure silver, which has high Vickers hardness and prohibit the occurrence of discoloration and its method. Disclosed are a silver jewelry article and its method, wherein the Vickers hardness is adjusted to 60 HV or higher, and when the height of the peak of 2θ=38°±0.2° by an XRD is designated as h1, and that of 2θ=44°±0.4° is designated as h2, h2/h1 is adjusted to 0.2 or greater.

Provided are a brazing material in paste form containing a powder mixture that contains titanium powder having an average particle diameter (D50) of 20 μm or less in an amount of 0.7 to 2.0 mass %, copper powder in an amount of 3 to 15 mass %, and silver powder as the remaining portion, and a vehicle, and techniques associated with the brazing material.