The present invention provides a highly fracture resistant, fatigue resistant copper-based alloy material and the like for which, for example, even when the material is subjected to repeated deformation consisting of loading of stress for applying a shape-memory alloy-specific strain and unloading of same followed return to the original shape, the alloy material is not susceptible to persistence of such strain. This copper-based alloy material has a multiphase structure in which a B2-type crystal structure precipitated phase is dispersed in a β-phase-comprising matrix.

The present invention provides a highly fracture resistant, fatigue resistant copper-based alloy material and the like for which, for example, even when the material is subjected to repeated deformation consisting of loading of stress for applying a shape-memory alloy-specific strain and unloading of same followed return to the original shape, the alloy material is not susceptible to persistence of such strain. This copper-based alloy material has a multiphase structure in which a B2-type crystal structure precipitated phase is dispersed in a β-phase-comprising matrix.

A method of forming a composite component having a brass or bronze powder metal portion sinter fit into a supporting, ferrous portion.

A method of forming a composite component having a brass or bronze powder metal portion sinter fit into a supporting, ferrous portion.

A hanger bar for an electrowinning cell, wherein hanger bar includes a bar portion and one or more contact portions adapted, in use, to be brought into contact with an electrical conductor. The contact portions are fabricated from an electrically conductive material, and a welded seal is formed between the bar portion and the contact portions in order to minimize corrosion.

A hanger bar for an electrowinning cell, wherein hanger bar includes a bar portion and one or more contact portions adapted, in use, to be brought into contact with an electrical conductor. The contact portions are fabricated from an electrically conductive material, and a welded seal is formed between the bar portion and the contact portions in order to minimize corrosion.

A powder metal compact is disclosed. The powder metal compact includes a cellular nanomatrix comprising a nanomatrix material. The powder metal compact also includes a plurality of dispersed particles comprising a particle core material that comprises an Al—Cu—Mg, Al—Mn, Al—Si, Al—Mg, Al—Mg—Si, Al—Zn, Al—Zn—Cu, Al—Zn—Mg, Al—Zn—Cr, Al—Zn—Zr, or Al—Sn—Li alloy, or a combination thereof, dispersed in the cellular nanomatrix.

A powder metal compact is disclosed. The powder metal compact includes a cellular nanomatrix comprising a nanomatrix material. The powder metal compact also includes a plurality of dispersed particles comprising a particle core material that comprises an Al—Cu—Mg, Al—Mn, Al—Si, Al—Mg, Al—Mg—Si, Al—Zn, Al—Zn—Cu, Al—Zn—Mg, Al—Zn—Cr, Al—Zn—Zr, or Al—Sn—Li alloy, or a combination thereof, dispersed in the cellular nanomatrix.

A covered electrical wire including a conductor and an insulating coating layer covering an outer periphery of the conductor, in which the conductor is a twisted wire obtained by concentrically twisting together a plurality of elemental wires constituted by a copper alloy, the copper alloy contains one or more elements selected from Fe, Ti, Mg, Sn, Ag, Ni, In, Zn, Cr, Al, and P in a total amount of 0.01 mass % to 5.5 mass % inclusive, and the remaining portion includes Cu and inevitable impurities, and an amount of oil adhering to a surface of a central elemental wire disposed at a central portion of the twisted wire is 10 μg/g or less with respect to the mass of the central elemental wire.

There is provided a Cu alloy target including a Cap film alloy. In a case where the number of atoms of the Cap film alloy is 100 at %, when the Cap film alloy contains Cu of more than 50 at % and Al of 0.5 at % or more, the Cap film alloy contains an additive metal containing at least one metal material selected from the group consisting of Mg of 0.5 at % or more, Si of 0.5 at % or more, and Ni of 3 at % or more, or contains Ca of 0.5 at % or more as the additive metal. Adhesion between a Cap film and a Si oxide thin film formed on the Cap film by a CVD method is strong, and removal does not occur.