The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.

The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.

A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

Disclosed are a lead-free, high-sulphur and easy-cutting copper-manganese alloy and preparation method thereof. The alloy comprises the following components in percentage by weight: 52.0-95.0 wt. % of copper, 0.01-0.20 wt. % of phosphorus, 0.01-20 wt. % of tin, 0.55-7.0 wt. % of manganese, 0.191-1.0 wt. % of sulphur, one or more metals other than zinc that have an affinity to sulphur less than the affinity of manganese to sulphur, with the sum of the contents thereof no more than 2.0 wt. %, and the balance being zinc and inevitable impurities, wherein the metals other than zinc that have an affinity to sulphur less than the affinity of manganese to sulphur are nickel, iron, tungsten, cobalt, molybdenum, antimony, bismuth and niobium. The copper alloy is manufactured by a powder metallurgy method, in which after uniformly mixing the alloy powder, sulphide powder and nickel powder, pressing and shaping, sintering, re-pressing, and re-sintering are carried out to obtain the copper alloy, and the resulting copper alloy is thermally treated.

Disclosed are a lead-free, high-sulphur and easy-cutting copper-manganese alloy and preparation method thereof. The alloy comprises the following components in percentage by weight: 52.0-95.0 wt. % of copper, 0.01-0.20 wt. % of phosphorus, 0.01-20 wt. % of tin, 0.55-7.0 wt. % of manganese, 0.191-1.0 wt. % of sulphur, one or more metals other than zinc that have an affinity to sulphur less than the affinity of manganese to sulphur, with the sum of the contents thereof no more than 2.0 wt. %, and the balance being zinc and inevitable impurities, wherein the metals other than zinc that have an affinity to sulphur less than the affinity of manganese to sulphur are nickel, iron, tungsten, cobalt, molybdenum, antimony, bismuth and niobium. The copper alloy is manufactured by a powder metallurgy method, in which after uniformly mixing the alloy powder, sulphide powder and nickel powder, pressing and shaping, sintering, re-pressing, and re-sintering are carried out to obtain the copper alloy, and the resulting copper alloy is thermally treated.

Processes are provided that include providing a copper-manganese alloy containing copper and manganese and having an amount of manganese that is at least 32 weight percent and not more than 40 weight percent of a combined total amount of the copper and manganese in the copper-manganese alloy, and casting the copper-manganese alloy by multidirectional solidification to produce a product in the form of a casting. The copper-manganese alloy has a composition sufficiently near the congruent melting point of the CuMn alloy system to sufficiently avoid dendritic growth during the multidirectional solidification of the copper-manganese alloy to avoid the formation of microporosity attributable to dendritic growth. The product has a cast microstructure having a cellular and/or planar solidification structure free of dendritic growth and having multidirectional columnar grains.

Processes are provided that include providing a copper-manganese alloy containing copper and manganese and having an amount of manganese that is at least 32 weight percent and not more than 40 weight percent of a combined total amount of the copper and manganese in the copper-manganese alloy, and casting the copper-manganese alloy by multidirectional solidification to produce a product in the form of a casting. The copper-manganese alloy has a composition sufficiently near the congruent melting point of the CuMn alloy system to sufficiently avoid dendritic growth during the multidirectional solidification of the copper-manganese alloy to avoid the formation of microporosity attributable to dendritic growth. The product has a cast microstructure having a cellular and/or planar solidification structure free of dendritic growth and having multidirectional columnar grains.

The present invention provides a titanium copper foil having improved adhesion to solder and higher resistance to discoloration due to a high temperature and high humidity environment, an acid solution or an alkaline solution, and as well as having improved etching processability. The present invention provides a titanium copper foil comprising a base metal, the base metal having a composition containing Ti of from 1.5 to 5.0% by mass, the balance being copper and inevitable impurities, and having a thickness of from 0.018 to 0.1 mm, wherein the titanium copper foil has an Sn plated layer on a surface of the base metal, and has an adhesive strength of 0.5 N or more as measured by a solder adhesive strength test according to the definition in the specification.

The present invention provides a titanium copper foil having improved adhesion to solder and higher resistance to discoloration due to a high temperature and high humidity environment, an acid solution or an alkaline solution, and as well as having improved etching processability. The present invention provides a titanium copper foil comprising a base metal, the base metal having a composition containing Ti of from 1.5 to 5.0% by mass, the balance being copper and inevitable impurities, and having a thickness of from 0.018 to 0.1 mm, wherein the titanium copper foil has an Sn plated layer on a surface of the base metal, and has an adhesive strength of 0.5 N or more as measured by a solder adhesive strength test according to the definition in the specification.