Patent classifications
C22C9/08
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
Electrolytic copper foil for lithium secondary battery and lithium secondary battery comprising the same
An electrolytic copper foil for a lithium secondary battery has yield strength of 30 kgf/mm.sup.2 to 60 kgf/mm.sup.2, a surface area ratio of 1 to 3, and a weight deviation of 3% or below.
HOT EXTRUDED MATERIAL FOR CYLINDRICAL SPUTTERING TARGET AND METHOD OF MANUFACTURING CYLINDRICAL SPUTTERING TARGET
A hot extruded material for a cylindrical sputtering target is provided, in which a purity of copper is in a range of 99.99 mass % to 99.9995 mass %, an Al content is 0.5 mass ppm or lower, a Si content is 1 mass ppm or lower, a C content is 1 mass ppm or lower, an O content is 2 mass ppm or lower, a H content is 1 mass ppm or lower, and a S content is 5 mass ppm or lower, and an average crystal grain size measured at 36 positions in total is in a range of 10 m to 110 m and a Vickers hardness measured at the 36 positions in total is in a range of 40 Hv to 100 Hv, the 36 positions being selected by obtaining three cross-sections perpendicular to an axis O direction from one end portion, an intermediate portion, and another end portion in the axis O direction, setting four positions in a peripheral direction from each of the three cross-sections, and setting three positions in each of the four positions, the three positions including a surface part, a radially position from the surface part, and a radially position from the surface part.
SINTERABLE METAL PASTE FOR USE IN ADDITIVE MANUFACTURING
A material and method are disclosed such that the material can be used to form functional metal pieces by producing an easily sintered layered body of dried metal paste. On a microstructural level, when dried, the metal paste creates a matrix of porous metal scaffold particles with infiltrant metal particles, which are positioned interstitially in the porous scaffold's interstitial voids. For this material to realize mechanical and processing benefits, the infiltrant particles are chosen such that they pack in the porous scaffold piece in a manner which does not significantly degrade the packing of the scaffold particles and so that they can also infiltrate the porous scaffold on heating. The method of using this paste provides a technique with high rate and resolution of metal part production due to a hybrid deposition/removal process.
SINTERABLE METAL PASTE FOR USE IN ADDITIVE MANUFACTURING
A material and method are disclosed such that the material can be used to form functional metal pieces by producing an easily sintered layered body of dried metal paste. On a microstructural level, when dried, the metal paste creates a matrix of porous metal scaffold particles with infiltrant metal particles, which are positioned interstitially in the porous scaffold's interstitial voids. For this material to realize mechanical and processing benefits, the infiltrant particles are chosen such that they pack in the porous scaffold piece in a manner which does not significantly degrade the packing of the scaffold particles and so that they can also infiltrate the porous scaffold on heating. The method of using this paste provides a technique with high rate and resolution of metal part production due to a hybrid deposition/removal process.
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
Materials for near field transducers and near field transducers containing same
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
Materials for near field transducers and near field transducers containing same
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.