A material and method are disclosed such that the material can be used to form functional metal pieces by producing an easily sintered layered body of dried metal paste. On a microstructural level, when dried, the metal paste creates a matrix of porous metal scaffold particles with infiltrant metal particles, which are positioned interstitially in the porous scaffold's interstitial voids. For this material to realize mechanical and processing benefits, the infiltrant particles are chosen such that they pack in the porous scaffold piece in a manner which does not significantly degrade the packing of the scaffold particles and so that they can also infiltrate the porous scaffold on heating. The method of using this paste provides a technique with high rate and resolution of metal part production due to a hybrid deposition/removal process.

Copper or a copper alloy characterized in having an -ray emission of 0.001 cph/cm.sup.2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in -ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in -ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.

Copper or a copper alloy characterized in having an -ray emission of 0.001 cph/cm.sup.2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in -ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in -ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.