A method for manufacturing a nonlinear superelastic file comprising the steps of: providing a superelastic file having a shaft and a file axis; providing a fixture including a file groove being defined by one or more displacement members, the file groove configured for receiving the shaft; inserting at least a portion of the shaft into the fixture along the file groove, the portion of the shaft including a first portion of the shaft; contacting the first portion of the shaft with a first displacement member of the one or more displacement members such that the first portion of the shaft is displaced from the file axis thereby forming a first offset portion of the shaft; heating the portion of the shaft while inserted in the fixture to a temperature of at least about 300 C. for a time period of at least about 1 minute to shape-set the portion of the shaft thereby forming a shape-set nonlinear file.

A method for manufacturing a nonlinear superelastic file comprising the steps of: providing a superelastic file having a shaft and a file axis; providing a fixture including a file groove being defined by one or more displacement members, the file groove configured for receiving the shaft; inserting at least a portion of the shaft into the fixture along the file groove, the portion of the shaft including a first portion of the shaft; contacting the first portion of the shaft with a first displacement member of the one or more displacement members such that the first portion of the shaft is displaced from the file axis thereby forming a first offset portion of the shaft; heating the portion of the shaft while inserted in the fixture to a temperature of at least about 300 C. for a time period of at least about 1 minute to shape-set the portion of the shaft thereby forming a shape-set nonlinear file.

The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.

The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.

The present invention provides a corrosion-resistant CuZn alloy, the alloy having a Zn content of from 15 to 55% by mass, the balance being Cu and inevitable impurities, wherein a total content of Zn and Cu is 99.995% by mass or more, and wherein a number of pores is 1/cm.sup.2 or less based on optical microscopic observation.

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

Disclosed is a degradable zinc base alloy implant material comprising, by mass percentage content, 0.01 wt % to 14 wt % of Fe, 0 wt % to 13 wt % of functional elements and the remainder being Zn and a preparation method and use thereof. During preparation, Zn, Fe, and the functional elements are homogeneously mixed and placed into a high-purity graphite crucible and smelted together under a mixed gas atmosphere of SF.sub.6 and CO.sub.2. The mechanical properties of the zinc base alloy implant material have been significantly improved, so that the implant material is easy to process and shape, and so that the properties of strength and plasticity, etc., meet the basic requirements of human body implant materials, such as vascular stents, orthopedic internal fixation systems, and the like.

Disclosed is a degradable zinc base alloy implant material comprising, by mass percentage content, 0.01 wt % to 14 wt % of Fe, 0 wt % to 13 wt % of functional elements and the remainder being Zn and a preparation method and use thereof. During preparation, Zn, Fe, and the functional elements are homogeneously mixed and placed into a high-purity graphite crucible and smelted together under a mixed gas atmosphere of SF.sub.6 and CO.sub.2. The mechanical properties of the zinc base alloy implant material have been significantly improved, so that the implant material is easy to process and shape, and so that the properties of strength and plasticity, etc., meet the basic requirements of human body implant materials, such as vascular stents, orthopedic internal fixation systems, and the like.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.