C22C2026/006

CUBIC BORON NITRIDE SINTERED BODY
20240067574 · 2024-02-29 · ·

A cubic boron nitride sintered body including cubic boron nitride and a binder phase, wherein: a content ratio of the cubic boron nitride is 85 volume % or more and 95 volume % or less, a content ratio of the binder phase is 5 volume % or more and 15 volume % or less, the binder phase contains Co.sub.3W.sub.3C, W.sub.2Co.sub.21B.sub.6, and an Al compound, and I.sub.B/I.sub.A is 0.02 or more and 0.15 or less, I.sub.C/I.sub.A is 0.02 or more and 1.00 or less, and I.sub.C?I.sub.D, where I.sub.A denotes an X-ray diffraction peak intensity of a (111) plane of the cubic boron nitride, I.sub.B denotes an X-ray diffraction peak intensity of a (400) plane of the Co.sub.3W.sub.3C, I.sub.C denotes an X-ray diffraction peak intensity of a (420) plane of the W.sub.2Co.sub.21B.sub.6, and I.sub.D denotes an X-ray diffraction peak intensity of a (001) plane of WC.

Polycrystalline diamond elements and systems and methods for fabricating the same

Polycrystalline diamond may include a working surface and a peripheral surface extending around an outer periphery of the working surface. The polycrystalline diamond includes a first volume including an interstitial material and a second volume having a leached region that includes boron and titanium. A method of fabricating a polycrystalline diamond element may include positioning a first volume of diamond particles adjacent to a substrate, the first volume of diamond particles including a material that includes a group 13 element, and positioning a second volume of diamond particles adjacent to the first volume of diamond particles such that the first volume of diamond particles is disposed between the second volume of diamond particles and the substrate, the second volume of diamond particles having a lower concentration of material including the group 13 element than the first volume of diamond particles.

CEMENTED CARBIDE MATERIAL AND METHOD OF MAKING SAME

A cemented carbide material comprises WC, between around 3 to around 10 wt. % Co and between around 0.5 to around 8 wt. % Re. The equivalent total carbon (ETC) content of the cemented carbide material with respect to WC is between around 6.3 wt. % to around 6.9 wt. % and the cemented carbide material is substantially free of eta-phase and free carbon. There is also disclosed a method of producing such a material and use of such a material.

CUTTING ELEMENTS, AND RELATED EARTH-BORING TOOLS, SUPPORTING SUBSTRATES, AND METHODS
20190368278 · 2019-12-05 ·

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

Cutting elements, methods for manufacturing such cutting elements, and tools incorporating such cutting elements

The present disclosure relates to cutting elements incorporating polycrystalline diamond bodies used for subterranean drilling applications, and more particularly, to polycrystalline diamond bodies having a high diamond content which are configured to provide improved properties of thermal stability and wear resistance, while maintaining a desired degree of impact resistance, when compared to prior polycrystalline diamond bodies. In various embodiments disclosed herein, a cutting element with high diamond content includes a modified PCD structure and/or a modified interface (between the PCD body and a substrate), to provide superior performance.

HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT

A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 m and 55-195 m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 m and 45-205 m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

CEMENTED CARBIDE CONTAINING MULI-COMPONENT HIGH ENTROPY CARBIDE AND/OR MULTI-COMPONENT HIGH ENTROPY ALLOY
20240141461 · 2024-05-02 ·

A sintered cemented carbide includes a high entropy carbide or a spinodal decomposed product thereof; and a metallic binder containing at least one of Co, CoRu, Ni, CoNi, CoCr, CoNiCr, CoRe, CoNiRe, CoNiRu, or a high entropy alloy, wherein the high entropy carbide is a single-phase solid solution carbide comprising four to ten metallic elements, and the spinodal decomposed product thereof includes two chemically distinct phases having a same crystal structure. A sintered cemented carbide also includes a carbide including at least one of WC, TiC, ZrC, HfC, NbC, TaC, or Cr.sub.3C.sub.2; and a metallic binder including a high entropy alloy. The high entropy alloy is an alloy of four to ten alloy elements selected from Al, Be, Fe, Co, Cr, Ni, Cu, W, V, Zr, Ti, Mn, Hf, Nb, Mo, Ru, Re, Ge, Sn, C, B, or Si.

COMPOSITE SINTERED MATERIAL

A composite sintered material includes: a plurality of diamond grains having an average grain size of less than or equal to 10 m; a plurality of cubic boron nitride grains having an average grain size of less than or equal to 2 m; and a remainder of a binder phase, wherein at least parts of adjacent diamond grains are bound to one another, the binder phase includes cobalt, in the composite sintered material, a content of the diamond grains is more than or equal to 30 volume % and less than or equal to 94 volume %, a content of the cubic boron nitride grains is more than or equal to 3 volume % and less than or equal to 40 volume %, and a content of the cobalt is more than or equal to 3 volume % and less than or equal to 30 volume %.

PCBN sintered compact
11976345 · 2024-05-07 · ·

The present application is a new improvement in the fine-grained cubic boron nitride sintered compact which may be employed to manufacture a cutting tool. The compact contains at least 80 vol % cBN with a metallic binder system and is sintered under HPHT conditions. The improvement incorporates alloys of aluminum in the metallic binder system.

Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten

A method of forming a polycrystalline diamond cutting element includes assembling a diamond material, a substrate, and a source of catalyst material or infiltrant material distinct from the substrate, the source of catalyst material or infiltrant material being adjacent to the diamond material to form an assembly. The substrate includes an attachment material including a refractory metal. The assembly is subjected to a first high-pressure/high temperature condition to cause the catalyst material or infiltrant material to melt and infiltrate into the diamond material and subjected to a second high-pressure/high temperature condition to cause the attachment material to melt and infiltrate a portion of the infiltrated diamond material to bond the infiltrated diamond material to the substrate.