C22C29/14

Binder compositions of tungsten tetraboride and abrasive methods thereof

Disclosed herein, in certain embodiments, are composite materials, methods, tools and abrasive materials comprising a tungsten-based metal composition and an alloy. In some cases, the composite materials or material are resistant to oxidation.

Binder compositions of tungsten tetraboride and abrasive methods thereof

Disclosed herein, in certain embodiments, are composite materials, methods, tools and abrasive materials comprising a tungsten-based metal composition and an alloy. In some cases, the composite materials or material are resistant to oxidation.

Cutting structure of cutting elements for downhole cutting tools

A cutting element may include a substrate; and an ultrahard layer on the substrate, the substrate and the ultrahard layer defining a non-planar working surface of the cutting element such that the ultrahard layer forms a cutting portion and the substrate is at least laterally adjacent to the ultrahard layer. Another cutting element includes a pointed region having a side surface extending from the pointed region outer perimeter to a peak. An ultrahard material body forms a portion of the pointed region including the peak, and a base region extends a depth from the pointed region outer perimeter. The ultrahard material body has a height to width aspect ratio with the height and width measured between two points of the body having the greatest distance apart along a dimension parallel with a longitudinal axis (i.e., height) along a dimension perpendicular to the longitudinal axis (i.e., width).

LOW THERMAL STRESS ENGINEERED METAL STRUCTURES
20230339820 · 2023-10-26 ·

A structured multi-phase composite which include a metal phase, and a low stiffness, high thermal conductivity phase or encapsulated phase change material, that are arranged to create a composite having high thermal conductivity, having reduced/controlled stiffness, and a low CTE to reduce thermal stresses in the composite when exposed to cyclic thermal loads. The structured multi-phase composite is useful for use in structures such as, but not limited to, high speed engine ducts, exhaust-impinged structures, heat exchangers, electrical boxes, heat sinks, and heat spreaders.

LOW THERMAL STRESS ENGINEERED METAL STRUCTURES
20230339820 · 2023-10-26 ·

A structured multi-phase composite which include a metal phase, and a low stiffness, high thermal conductivity phase or encapsulated phase change material, that are arranged to create a composite having high thermal conductivity, having reduced/controlled stiffness, and a low CTE to reduce thermal stresses in the composite when exposed to cyclic thermal loads. The structured multi-phase composite is useful for use in structures such as, but not limited to, high speed engine ducts, exhaust-impinged structures, heat exchangers, electrical boxes, heat sinks, and heat spreaders.

BINDER COMPOSITIONS OF TUNGSTEN TETRABORIDE AND ABRASIVE METHODS THEREOF

Disclosed herein, in certain embodiments, are composite materials, methods, tools and abrasive materials comprising a tungsten-based metal composition and an alloy. In some cases, the composite materials or material are resistant to oxidation.

BINDER COMPOSITIONS OF TUNGSTEN TETRABORIDE AND ABRASIVE METHODS THEREOF

Disclosed herein, in certain embodiments, are composite materials, methods, tools and abrasive materials comprising a tungsten-based metal composition and an alloy. In some cases, the composite materials or material are resistant to oxidation.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

Metallic matrix composites synthesized with uniform in situ formed reinforcement
11827959 · 2023-11-28 · ·

Metallic matrix composites are synthesized by mixing a first reactant, a second reactant and a nucleator compound to obtain a reaction mixture, and heating the reaction mixture to an auto-activation temperature to initiate a self-propagating high-temperature synthesis reaction between the first and second reactants. The metallic matrix composite can include a metallic matrix and an in situ formed reinforcement. The reinforcement can be formed of discrete particles substantially uniformly dispersed within the metallic matrix. Each of the particles can have a reinforcement constituent disposed about a core formed of the nucleator compound.