A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° is 0.41 or more in an X-ray diffraction measurement of the silicon-containing alloy using a CuKα1 ray.

In an electric device the negative electrode active material layer includes a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component, a predetermined composition, and a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° in a predetermined range in an X-ray diffraction measurement using a CuKα1 ray is used as a Si-containing alloy. A solid solution or an oxide-coated solid solution in which a coating layer containing an oxide in a predetermined amount is formed on the particle surface of the solid solution and is used in the positive electrode active material layer.

In an electric device the negative electrode active material layer includes a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component, a predetermined composition, and a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° in a predetermined range in an X-ray diffraction measurement using a CuKα1 ray is used as a Si-containing alloy. A solid solution or an oxide-coated solid solution in which a coating layer containing an oxide in a predetermined amount is formed on the particle surface of the solid solution and is used in the positive electrode active material layer.

A powder metal compact is disclosed. The powder metal compact includes a cellular nanomatrix comprising a nanomatrix material. The powder metal compact also includes a plurality of dispersed particles comprising a particle core material that comprises an Mg—Zr, Mg—Zn—Zr, Mg—Al—Zn—Mn, Mg—Zn—Cu—Mn or Mg—W alloy, or a combination thereof, dispersed in the cellular nanomatrix.

There is provided a thermoelectric material including a compound which is formed of an element R belonging to alkaline earth metal and lanthanoid, and an element X belonging to any of Group 13 elements, Group 14 elements, and Group 15 elements. The composition ratio of the element R and the element X is selected to obtain the compound having an AlB.sub.2 type structure.

There is provided a thermoelectric material including a compound which is formed of an element R belonging to alkaline earth metal and lanthanoid, and an element X belonging to any of Group 13 elements, Group 14 elements, and Group 15 elements. The composition ratio of the element R and the element X is selected to obtain the compound having an AlB.sub.2 type structure.

The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.

Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:

45 atm %≤Si/(Ru+Si)≤70 atm %

30 atm %≤Ru/(Ru+Si)≤55 atm %.

Method for manufacturing an aluminium alloy part by additive manufacturing comprising a step in which a layer of a mixture of powders is locally melted then solidified, wherein the mixture of powders comprises: first particles comprising at least 80 wt. % aluminium and up to 20 wt. % one or more additional elements, and second particles of ZrSi.sub.2, the mixture of powders comprising 1.8 wt. % to 4 wt. % second particles.