The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

A composition of matter for use in a binder jet is provided. The composition includes a binder, and the binder includes a polymer made from saturated monomers. The binder may be a reversible binder that decomposes during sintering. And, different binders may be used in different locations of a target object produced using the inventive compositions.

A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2=37 to 45 to a diffraction peak intensity A of a (111) plane of Si in a range of 2=24 to 33 is 0.41 or more in an X-ray diffraction measurement of the silicon-containing alloy using a CuK1 ray.

There is provided herein a high temperature air stable ceramic metallic material used in solar selective surface and its production method.

There is provided herein a high temperature air stable ceramic metallic material used in solar selective surface and its production method.

A negative electrode active material including a silicon-containing alloy having a ternary alloy composition expressed by SiSnTi and including a structure in which an a-Si phase containing amorphous or low-crystalline silicon formed by dissolving tin in a crystal structure of silicon is dispersed in a parent phase of a silicide phase including TiSi.sub.2, wherein when a peak intensity of a SiO bond peak that is observed at a position where an interatomic distance in a radial wave function observed by XAFS is 0.13 nm is S(1) and a peak intensity of a SiSi bond peak that is observed at a position where the interatomic distance is 0.2 nm is S(2), a relation of S(2)>S(1) is satisfied is used for an electrical device. When used, the negative electrode active material achieves both cycle durability and charging-discharging efficiency for an electrical device such as a lithium ion secondary battery.

A negative electrode active material including a silicon-containing alloy having a ternary alloy composition expressed by SiSnTi and including a structure in which an a-Si phase containing amorphous or low-crystalline silicon formed by dissolving tin in a crystal structure of silicon is dispersed in a parent phase of a silicide phase including TiSi.sub.2, wherein when a peak intensity of a SiO bond peak that is observed at a position where an interatomic distance in a radial wave function observed by XAFS is 0.13 nm is S(1) and a peak intensity of a SiSi bond peak that is observed at a position where the interatomic distance is 0.2 nm is S(2), a relation of S(2)>S(1) is satisfied is used for an electrical device. When used, the negative electrode active material achieves both cycle durability and charging-discharging efficiency for an electrical device such as a lithium ion secondary battery.

A negative electrode active material having high cycle durability contains an alloy represented by the following chemical formula (1):

Si.sub.xSn.sub.yM.sub.zA.sub.a(1)

wherein M is Zn, A is unavoidable impurities, x, y, z, and a represent % by mass values, and in that case, 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100, in which the half width of the diffraction peak of the (111) surface of Si in the range of 2=24 to 33 by X ray diffraction measurement of the alloy using CuK ray is 0.7 or more, and the x is more than 23 and less than 64, the y is 4 or more and less than 34, and the z is more than 0 and less than 65.

A negative electrode active material having high cycle durability contains an alloy represented by the following chemical formula (1):

Si.sub.xSn.sub.yM.sub.zA.sub.a(1)

wherein M is Zn, A is unavoidable impurities, x, y, z, and a represent % by mass values, and in that case, 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100, in which the half width of the diffraction peak of the (111) surface of Si in the range of 2=24 to 33 by X ray diffraction measurement of the alloy using CuK ray is 0.7 or more, and the x is more than 23 and less than 64, the y is 4 or more and less than 34, and the z is more than 0 and less than 65.

A thin metal strip is produced by a single roll strip casting process, using a cooling roll, a tundish, and a molten metal remover. The cooling roll has an outer peripheral surface, on which it cools and solidifies molten metal while rotating. The tundish can accommodate the molten metal and supplies it onto the outer peripheral surface of the cooling roll. The molten metal remover is disposed downstream of the tundish in the rotating direction of the cooling roll with a gap A between the molten metal remover and an outer peripheral surface of the cooling roll, and removes a surface portion of the molten metal on the outer peripheral surface of the cooling roll to cut down the thickness of the molten metal to the width of the gap A.