An alloy powder preparation method according to an embodiment comprises the steps of: forming a mixture by mixing a plurality of metal compounds; and thermally treating the mixture, wherein, in the step of thermally treating the mixture, the process temperature changes according to the particle diameter of alloy powder. In addition, the step of thermally treating the mixture proceeds through hydrogen reduction at a process temperature of 300 to 700° C.

An alloy powder preparation method according to an embodiment comprises the steps of: forming a mixture by mixing a plurality of metal compounds; and thermally treating the mixture, wherein, in the step of thermally treating the mixture, the process temperature changes according to the particle diameter of alloy powder. In addition, the step of thermally treating the mixture proceeds through hydrogen reduction at a process temperature of 300 to 700° C.

A probe pin material including a Ag—Pd—Cu-based alloy essentially including Ag, Pd and Cu, B as a first additive element, and at least any element of Zn, Bi and Sn, as a second additive element. A concentration of the first additive element is 0.1 mass % or more and 1.5 mass % or less, and a concentration of the second additive element is 0.1 mass % or more and 1.0 mass % or less. A Ag concentration, a Pd concentration and a Cu concentration in the Ag—Pd—Cu-based alloy are required as follows: a Ag concentration (S.sub.Ag), a Pd concentration (S.sub.Pd) and a Cu concentration (S.sub.Cu) converted as given that a Ag—Pd—Cu ternary alloy is formed from only such three elements all fall within a predetermined range in a Ag—Pd—Cu ternary system phase diagram. The probe pin material is excellent in resistance value and hardness/wear resistance, and also is enhanced in bending resistance.

A probe pin material including a Ag—Pd—Cu-based alloy essentially including Ag, Pd and Cu, B as a first additive element, and at least any element of Zn, Bi and Sn, as a second additive element. A concentration of the first additive element is 0.1 mass % or more and 1.5 mass % or less, and a concentration of the second additive element is 0.1 mass % or more and 1.0 mass % or less. A Ag concentration, a Pd concentration and a Cu concentration in the Ag—Pd—Cu-based alloy are required as follows: a Ag concentration (S.sub.Ag), a Pd concentration (S.sub.Pd) and a Cu concentration (S.sub.Cu) converted as given that a Ag—Pd—Cu ternary alloy is formed from only such three elements all fall within a predetermined range in a Ag—Pd—Cu ternary system phase diagram. The probe pin material is excellent in resistance value and hardness/wear resistance, and also is enhanced in bending resistance.

This invention discloses a method of manufacturing a desired metal part which comprises (1) providing an powder metal sinterbraze hard steel component and a wrought steel stamping component; (2) affixing the powder metal hard steel component and the wrought steel stamping component together with a brazing filler metal being alloyed at the interface between the powder metal hard steel component and the wrought steel stamping component; (3) sinter brazing the powder metal hard steel component and the wrought steel stamping component together to produce an in-process metal part; and (4) tempering the in-process metal part to produce the desired metal part.

This invention discloses a method of manufacturing a desired metal part which comprises (1) providing an powder metal sinterbraze hard steel component and a wrought steel stamping component; (2) affixing the powder metal hard steel component and the wrought steel stamping component together with a brazing filler metal being alloyed at the interface between the powder metal hard steel component and the wrought steel stamping component; (3) sinter brazing the powder metal hard steel component and the wrought steel stamping component together to produce an in-process metal part; and (4) tempering the in-process metal part to produce the desired metal part.

The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.

The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.

Disclosed herein, in certain embodiments, are composite materials, methods, tools and abrasive materials comprising a tungsten-based metal composition and an alloy. In some cases, the composite materials or material are resistant to oxidation.

Disclosed herein, in certain embodiments, are composite materials, methods, tools and abrasive materials comprising a tungsten-based metal composition and an alloy. In some cases, the composite materials or material are resistant to oxidation.