The embodiments described herein pertain generally to an amalgam electrode, and a producing method of the amalgam electrode, and an electrochemical reduction method of carbon dioxide using the amalgam electrode.

The embodiments described herein pertain generally to an amalgam electrode, and a producing method of the amalgam electrode, and an electrochemical reduction method of carbon dioxide using the amalgam electrode.

A manufacturing apparatus 1 has a leveler 3 which, while pulling out a steel plate starting with one end thereof and while transporting it, corrects the waviness and the like of the steel plate, which serves as a backing plate 2 and is constituted by a continuous strip having a thickness of 0.3 to 2.0 mm and provided as a hoop material by being wound into a coil shape.

A manufacturing apparatus 1 has a leveler 3 which, while pulling out a steel plate starting with one end thereof and while transporting it, corrects the waviness and the like of the steel plate, which serves as a backing plate 2 and is constituted by a continuous strip having a thickness of 0.3 to 2.0 mm and provided as a hoop material by being wound into a coil shape.

A method of making a metallic alloy, more particularly, a high-entropy alloy with a composite structure that exhibits high strength and good ductility, and is used as a component material in electromagnetic, chemical, shipbuilding, machinery, and other applications, and in extreme environments, and the like.

A method of making a metallic alloy, more particularly, a high-entropy alloy with a composite structure that exhibits high strength and good ductility, and is used as a component material in electromagnetic, chemical, shipbuilding, machinery, and other applications, and in extreme environments, and the like.

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

A metallic alloy, more particularly, a high-entropy alloy with a composite structure exhibits high strength and good ductility, and is used as a component material in electromagnetic, chemical, shipbuilding, machinery, and other applications, and in extreme environments, and the like.

A metallic alloy, more particularly, a high-entropy alloy with a composite structure exhibits high strength and good ductility, and is used as a component material in electromagnetic, chemical, shipbuilding, machinery, and other applications, and in extreme environments, and the like.