The negative electrode for an electric device includes a current collector and an electrode layer containing a negative electrode active material, a conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by the following formula (1): Si.sub.xSn.sub.yM.sub.zA.sub.a (in the formula (1), M is at least one metal selected from the group consisting of Al, V, C and a combination thereof, A is inevitable impurities, and x, y, z and a represent mass percent values and satisfy the conditions of 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100), and elastic elongation of the current collector is 1.30% or greater.

The negative electrode for an electric device includes a current collector and an electrode layer containing a negative electrode active material, a conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by the following formula (1): Si.sub.xSn.sub.yM.sub.zA.sub.a (in the formula (1), M is at least one metal selected from the group consisting of Al, V, C and a combination thereof, A is inevitable impurities, and x, y, z and a represent mass percent values and satisfy the conditions of 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100), and elastic elongation of the current collector is 1.30% or greater.

Disclosed is an acid-resisting alloy catalyst comprising nickel, one or more rare earth elements, stannum and aluminum. The acid-resistant alloy catalyst is low-cost and stable, and does not need a carrier, and can be stably used in continuous industrial production, thus achieving a low production cost.

A negative electrode active material for an electric device includes an alloy containing greater than or equal to 29% by mass of silicon and containing tin, carbon and inevitable impurities as a residue.

A negative electrode active material for an electric device includes an alloy containing greater than or equal to 29% by mass of silicon and containing tin, carbon and inevitable impurities as a residue.

A NiCrFe-based alloy brazing filler material to which Cu is added, and which has a low melting temperature, and is inexpensive and excellent in corrosion resistance and in strength, for use in manufacture of stainless-steel heat exchangers or the like, specifically, a NiCrFe-based alloy brazing filler material, including, in mass %, Cr: 15 to 30%; Fe: 15 to 30%; Cu: 2.1 to 7.5%; P: 3 to 12%; and Si: 0 to 8%; and the balance being Ni and unavoidable impurities, wherein the total content of Cr and Fe is 30 to 54%, and the total content of P and Si is 7 to 14%.

A NiCrFe-based alloy brazing filler material to which Cu is added, and which has a low melting temperature, and is inexpensive and excellent in corrosion resistance and in strength, for use in manufacture of stainless-steel heat exchangers or the like, specifically, a NiCrFe-based alloy brazing filler material, including, in mass %, Cr: 15 to 30%; Fe: 15 to 30%; Cu: 2.1 to 7.5%; P: 3 to 12%; and Si: 0 to 8%; and the balance being Ni and unavoidable impurities, wherein the total content of Cr and Fe is 30 to 54%, and the total content of P and Si is 7 to 14%.

According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 m or more is present at any vertex of chips of the thermoelectric materials.

According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 m or more is present at any vertex of chips of the thermoelectric materials.

A sintered sliding material with excellent corrosion resistance, heat resistance, and wear resistance is provided. The sintered sliding material has a composition made of: 36-86 mass % of Ni; 1-11 mass % of Sn; 0.05-1.0 mass % of P; 1-9 mass % of C; and the Cu balance including inevitable impurities. The sintered sliding material is made of a sintered material of a plurality of grains of alloy of NiCu alloy or CuNi alloy, the NiCu alloy and the CuNi alloy containing Sn, P, C, and Si; has a structure in which pores are dispersedly formed in grain boundaries of the plurality of the grains of alloy; and as inevitable impurities in a matrix constituted from the grains of alloy, a C content is 0.6 mass % or less and a Si content is 0.15 mass % or less.