A negative electrode active material which has a ternary alloy composition represented by SiSn-M (M is one or two or more transition metal elements) and has a microstructure which has a first phase (silicide phase) having a silicide of a transition metal as a main component and a second phase partially containing Sn and having amorphous or low crystalline silicon as a main component, and further has partially a plurality of independent first phases and partially a eutectic structure of the first phase and the second phase is used for an electric device. The negative electrode active material improves cycle durability of an electric device such as a lithium ion secondary battery.

A negative electrode active material which has a ternary alloy composition represented by SiSn-M (M is one or two or more transition metal elements) and has a microstructure which has a first phase (silicide phase) having a silicide of a transition metal as a main component and a second phase partially containing Sn and having amorphous or low crystalline silicon as a main component, and further has partially a plurality of independent first phases and partially a eutectic structure of the first phase and the second phase is used for an electric device. The negative electrode active material improves cycle durability of an electric device such as a lithium ion secondary battery.

A high hardness and temperature-resistant alloy is disclosed, and comprises 10-40 atomic percent Co, 30-56 atomic percent Cr, 10-40 atomic percent Ni, 6-13 atomic percent C, 0-8 atomic percent Mo, and 0-8 atomic percent W. Moreover, the elemental composition of the high hardness and temperature-resistant alloy can further comprise at least one additive element, such as Pb, Sn, Ge, Si, Zn, Sb, P, B, Mg, Mn, V, Nb, Ti, Zr, Y, La, Ce, Al, Ta, Cu, and Fe. Experimental data reveal that, the high hardness and temperature-resistant alloy can still show a property of hardness greater than HV100 in 900 degrees Celsius. Therefore, experimental data have proved that the high hardness and temperature-resistant alloy has a significant potential for applications in the manufacture of hot working die metals, components (e.g., turbine blade) for high temperature applications, and devices (e.g., aeroengine) for high temperature applications.

Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation.

Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation.

This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an AgCu eutectic structure layer 32 having a thickness of 15 m or less that is formed between the nitride layer and the copper plate.

This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an AgCu eutectic structure layer 32 having a thickness of 15 m or less that is formed between the nitride layer and the copper plate.

A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.

A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.

A negative electrode active material having high cycle durability contains an alloy represented by the following chemical formula (1):

Si.sub.xSn.sub.yM.sub.zA.sub.a(1)

wherein M is Zn, A is unavoidable impurities, x, y, z, and a represent % by mass values, and in that case, 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100, in which the half width of the diffraction peak of the (111) surface of Si in the range of 2=24 to 33 by X ray diffraction measurement of the alloy using CuK ray is 0.7 or more, and the x is more than 23 and less than 64, the y is 4 or more and less than 34, and the z is more than 0 and less than 65.