There is provided a hot-stamped body including: a steel base metal; and a metallic layer formed on a surface of the steel base metal, wherein the metallic layer includes: an interface layer that contains, in mass %, Al: 30.0 to 36.0%, has a thickness of 100 nm to 15 μm, and is located in an interface between the metallic layer and the steel base metal; and a principal layer that includes coexisting Zn phases and insular FeAl.sub.2 phases, is located on the interface layer, and has a thickness of 1 μm to 40 μm. This hot-stamped body is excellent in fatigue properties, corrosion resistance, and chipping resistance.

There is provided a hot-stamped body including: a steel base metal; and a metallic layer formed on a surface of the steel base metal, wherein the metallic layer includes: an interface layer that contains, in mass %, Al: 30.0 to 36.0%, has a thickness of 100 nm to 15 μm, and is located in an interface between the metallic layer and the steel base metal; and a principal layer that includes coexisting Zn phases and insular FeAl.sub.2 phases, is located on the interface layer, and has a thickness of 1 μm to 40 μm. This hot-stamped body is excellent in fatigue properties, corrosion resistance, and chipping resistance.

A method for scaled-up synthesis of medium-entropy and high-entropy nanoparticles (NPs) including alloys and ceramics on various substrates such as carbon, metal and glass. The method requires only two steps to synthesize these NPs, including loading metal salt precursors with equal molar ratio onto a support and irradiating the support by highly intense laser pulses in liquid at ambient atmosphere. The method ensures multiple (3˜9) atoms to combine without segregation regardless of their mutual solubility. The method can easily tailor the particle size from nanometer to micrometer by controlling the parameters.

An electrical connector includes a first layer having a first coefficient of thermal expansion and a second layer overlaying the first layer having a second coefficient of thermal expansion. A first difference between the first coefficient of thermal expansion and a coefficient of thermal expansion of glass is greater than a second difference between the second coefficient of thermal expansion and the coefficient of thermal expansion of glass. The electrical connector further includes a layer of a solder alloy having about 15% to 28% indium by weight, about 5% to 20% zinc by weight, about 1% to 6% silver by weight, and at least 36% tin by weight. The solder layer is disposed on at least a portion of the second layer.

An electrical connector includes a first layer having a first coefficient of thermal expansion and a second layer overlaying the first layer having a second coefficient of thermal expansion. A first difference between the first coefficient of thermal expansion and a coefficient of thermal expansion of glass is greater than a second difference between the second coefficient of thermal expansion and the coefficient of thermal expansion of glass. The electrical connector further includes a layer of a solder alloy having about 15% to 28% indium by weight, about 5% to 20% zinc by weight, about 1% to 6% silver by weight, and at least 36% tin by weight. The solder layer is disposed on at least a portion of the second layer.

The present invention relates to an alloy-coated steel sheet comprising: a steel sheet, and Al—Mg—Si—Zn alloy layer positioned on the steel sheet, wherein the Al—Mg—Si—Zn alloy layer comprises a Mg—Zn alloy phase, and wherein the Mg—Zn alloy phase comprises MgZn.sub.2 and Mg.sub.2Zn.sub.11, and the Mg—Zn alloy phase further comprises at least one of MgZn, Mg.sub.21Zn.sub.25, Mg.sub.51Zn.sub.20 and Mg.sub.2Zn.sub.3.

The invention relates to a compacted and densified metal material having one or more phases formed of an agglomerate of grains, the cohesion of the material being provided by bridges formed between grains, said material having a relative density higher than or equal to 95% and preferably higher than or equal to 98%.

The invention relates to a compacted and densified metal material having one or more phases formed of an agglomerate of grains, the cohesion of the material being provided by bridges formed between grains, said material having a relative density higher than or equal to 95% and preferably higher than or equal to 98%.

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.