Disclosed are a copper-cobalt-silicon-iron-phosphorus (Cu—Co—Si—Fe—P)-based alloy having strength, electrical conductivity, and excellent bending formability, and a method for producing the alloy. The copper alloy contains 1.2 to 2.5% by mass of cobalt (Co); 0.2 to 1.0% by mass of silicon (Si); 0.01 to 0.5% by mass of iron (Fe); 0.001 to 0.2% by mass of phosphorus (P); a balance amount of copper (Cu); unavoidable impurities; and optionally, 0.05% by mass or smaller of each of at least one selected from a group consisting of nickel (Ni), manganese (Mn) and magnesium (Mg), wherein a ratio between cobalt (Co) mass and silicon (Si) mass meets a relationship: 3.5≤Co/Si≤4.5, wherein a ratio between iron (Fe) mass and phosphorus (P) mass meets a relationship: 1.0<Fe/P. A bimodal structure improves the bending formability while maintaining the electrical conductivity and strength.

Disclosed are a copper-cobalt-silicon-iron-phosphorus (Cu—Co—Si—Fe—P)-based alloy having strength, electrical conductivity, and excellent bending formability, and a method for producing the alloy. The copper alloy contains 1.2 to 2.5% by mass of cobalt (Co); 0.2 to 1.0% by mass of silicon (Si); 0.01 to 0.5% by mass of iron (Fe); 0.001 to 0.2% by mass of phosphorus (P); a balance amount of copper (Cu); unavoidable impurities; and optionally, 0.05% by mass or smaller of each of at least one selected from a group consisting of nickel (Ni), manganese (Mn) and magnesium (Mg), wherein a ratio between cobalt (Co) mass and silicon (Si) mass meets a relationship: 3.5≤Co/Si≤4.5, wherein a ratio between iron (Fe) mass and phosphorus (P) mass meets a relationship: 1.0<Fe/P. A bimodal structure improves the bending formability while maintaining the electrical conductivity and strength.

A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

An extrusion feedstock material is provided, the material comprising a length of one material extending from a first end to a second end; and at least one slot extending lengthwise within the one material between the first and second ends of the material. A process for extruding conductive material is also provided, the process comprising providing both rotational and axial forces between a die tool and a length of feedstock material to form an extrusion product, wherein the length of feedstock and conductive material comprise Al and NanoCrystalline Carbon Forms (NCCF). A process for extruding material is provided, the process comprising: providing both rotational and axial forces between a die tool and a length of feedstock material to form an extrusion product, wherein the length of feedstock material comprises: a length of material extending from a first end to a second end; and at least one slot extending lengthwise within the material between the first and second ends of the material. A conductive extrudate material is provided comprising Al and NanoCrystalline Carbon Forms (NCCF).

An extrusion feedstock material is provided, the material comprising a length of one material extending from a first end to a second end; and at least one slot extending lengthwise within the one material between the first and second ends of the material. A process for extruding conductive material is also provided, the process comprising providing both rotational and axial forces between a die tool and a length of feedstock material to form an extrusion product, wherein the length of feedstock and conductive material comprise Al and NanoCrystalline Carbon Forms (NCCF). A process for extruding material is provided, the process comprising: providing both rotational and axial forces between a die tool and a length of feedstock material to form an extrusion product, wherein the length of feedstock material comprises: a length of material extending from a first end to a second end; and at least one slot extending lengthwise within the material between the first and second ends of the material. A conductive extrudate material is provided comprising Al and NanoCrystalline Carbon Forms (NCCF).

There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm.sup.2) or more and 1.6 (μm/μm.sup.2) or less.

A copper alloy sheet material having improved etching characteristics contains (in mass %) Ni: 1.00 to 4.50%, Si: 0.10 to 1.40%, and optionally one or more kind of Co, Mg, Cr, P, B, Mn, Sn, Ti, Zr, Al, Fe, Zn, and Ag. The sheet material has an area ratio S.sub.B/S.sub.S of 0.40 or more in an EBSD measurement on a cross section perpendicular to a rolling direction, wherein S.sub.S represents area of a region satisfying at least one of conditions of a crystal orientation difference from the S1 {241} <112> orientation of 10° or less and a crystal orientation difference from the S2 {231} <124> orientation of 10° or less, and S.sub.B represents an area of a region having a crystal orientation difference from the Brass {011} <211> orientation of 10° or less.

A copper alloy sheet material having improved etching characteristics contains (in mass %) Ni: 1.00 to 4.50%, Si: 0.10 to 1.40%, and optionally one or more kind of Co, Mg, Cr, P, B, Mn, Sn, Ti, Zr, Al, Fe, Zn, and Ag. The sheet material has an area ratio S.sub.B/S.sub.S of 0.40 or more in an EBSD measurement on a cross section perpendicular to a rolling direction, wherein S.sub.S represents area of a region satisfying at least one of conditions of a crystal orientation difference from the S1 {241} <112> orientation of 10° or less and a crystal orientation difference from the S2 {231} <124> orientation of 10° or less, and S.sub.B represents an area of a region having a crystal orientation difference from the Brass {011} <211> orientation of 10° or less.

A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.

A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.