A sintered bearing 1 is formed by sintering a raw material powder containing aluminum fluoride. The sintered bearing 1 has a structure obtained by sintering an aluminum-copper alloy and contains 3 to 13 mass % aluminum and 0.05 to 0.6 mass % phosphorus, copper as a main component of the remainder, and inevitable impurities. The sintered bearing 1 is manufactured by performing sintering in a closed space 23, and by, under the assumption that all aluminum fluoride contained in the raw material powder is gasified in the closed space 23, controlling the concentration of the aluminum fluoride gas to be 5 ppm or more, thus performing the sintering.

A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 10.0 mass ppm or less of a total content of Pb, Se, and Te, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 μm or more, an aspect ratio of the crystal grain on the rolled surface is 2.0 or less, and an average crystal grain size of the crystal grains on the rolled surface after a pressure heat treatment performed under conditions of a pressure of 0.6 MPa, a heating temperature of 850° C., and a retention time at the heating temperature of 90 minutes is 500 μm or less.

A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 10.0 mass ppm or less of a total content of Pb, Se, and Te, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 μm or more, an aspect ratio of the crystal grain on the rolled surface is 2.0 or less, and an average crystal grain size of the crystal grains on the rolled surface after a pressure heat treatment performed under conditions of a pressure of 0.6 MPa, a heating temperature of 850° C., and a retention time at the heating temperature of 90 minutes is 500 μm or less.

The present invention discloses a Nb and Al-containing titanium-copper alloy strip, characterized in that the weight percentage composition of the titanium-copper alloy strip comprises: 2.00-4.50 wt % Ti, 0.005-0.4 wt % Nb, and 0.01-0.5 wt % Al, balance being Cu and unavoidable impurities. Preferably, in the microstructure of the titanium-copper alloy strip, the number of Nb and Al-containing intermetallic compound particles with a particle size of 50-500 nm is not less than 1×10.sup.5/mm.sup.2, and the number of Nb and Al-containing intermetallic compound particles with a particle size greater than 1 μm is not more than 1×10.sup.3/mm.sup.2. Under the condition of ensuring excellent bendability, the titanium-copper alloy strip has excellent stability, especially the stability of mechanical properties at high temperatures. The present invention also relates to a method for producing the titanium-copper alloy strip.

This copper alloy for electronic or electric devices contains 100 mass ppm or greater and 400 mass ppm or less of Mg, 5 mass ppm or greater and 20 mass ppm or less of Ag, and less than 5 mass ppm of P with a balance being Cu and inevitable impurities, in which when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NF.sub.J3 and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NF.sub.J2, an expression of 0.22<(NF.sub.J2/(1−NF.sub.J3)).sup.0.5≤0.45 is satisfied.

This copper alloy for electronic or electric devices contains 100 mass ppm or greater and 400 mass ppm or less of Mg, 5 mass ppm or greater and 20 mass ppm or less of Ag, and less than 5 mass ppm of P with a balance being Cu and inevitable impurities, in which when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NF.sub.J3 and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NF.sub.J2, an expression of 0.22<(NF.sub.J2/(1−NF.sub.J3)).sup.0.5≤0.45 is satisfied.

It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

Provided is a preparation method for an ultrahigh-conductivity multilayer single-crystal laminated copper material, where multiple layers of single-crystal copper foils are laminated together to form a laminate, and the laminate is pressurized and annealed as one piece by performing pressurizing and high-temperature annealing at the same time, or the laminate is pressed as one piece by means of direct hot rolling, thereby obtaining an ultrahigh-conductivity multi-layer single-crystal laminated copper material, whereby, according to the method, multiple layers of single-crystal copper foils are used as raw materials, an ultrahigh-conductivity multi-layer single-crystal laminated copper material is prepared by means of hot rolling or pressing and annealing, and the conductivity of the copper material is greater than or equal to 105% IACS.

Provided is a preparation method for an ultrahigh-conductivity multilayer single-crystal laminated copper material, where multiple layers of single-crystal copper foils are laminated together to form a laminate, and the laminate is pressurized and annealed as one piece by performing pressurizing and high-temperature annealing at the same time, or the laminate is pressed as one piece by means of direct hot rolling, thereby obtaining an ultrahigh-conductivity multi-layer single-crystal laminated copper material, whereby, according to the method, multiple layers of single-crystal copper foils are used as raw materials, an ultrahigh-conductivity multi-layer single-crystal laminated copper material is prepared by means of hot rolling or pressing and annealing, and the conductivity of the copper material is greater than or equal to 105% IACS.