A method of producing electrodes includes selecting a palladium alloy, annealing the palladium alloy at a first temperature above 350° C., cold working the palladium alloy into a desired electrode shape, and annealing the palladium alloy at a second temperatures and for a time sufficient to produce a grain size between about 5 microns and about 100 microns. The method further includes etching the palladium alloy, rinsing the palladium alloy with at least one of water and heavy water, and storing the palladium alloy in an inert environment.

A method of producing electrodes includes selecting a palladium alloy, annealing the palladium alloy at a first temperature above 350° C., cold working the palladium alloy into a desired electrode shape, and annealing the palladium alloy at a second temperatures and for a time sufficient to produce a grain size between about 5 microns and about 100 microns. The method further includes etching the palladium alloy, rinsing the palladium alloy with at least one of water and heavy water, and storing the palladium alloy in an inert environment.

The present invention discloses a method for manufacturing an insulated spherical weld gold wire for integrated circuit double-layer stacked package, which relates to the technical field of microelectronic packaging spherical weld gold wires, and specifically comprises the following steps: alloy sheet preparation; alloy rod preparation; stretching; annealing treatment; activation treatment; sputtered insulating coating; multi-winding and sub-packaging, since the polyaryletherketone insulating coating is provided on the surface of the spherical weld gold wire in a scaled integrated circuit and the double-layer stacked package of the present invention, the spherical weld gold wire is allowed to contact and cross during packaging, without affecting the product performance, cost and quality; two high-hardness and high-conductivity materials of cobalt and germanium are added, which greatly enhances the tensile strength of the material.

The present invention discloses a method for manufacturing an insulated spherical weld gold wire for integrated circuit double-layer stacked package, which relates to the technical field of microelectronic packaging spherical weld gold wires, and specifically comprises the following steps: alloy sheet preparation; alloy rod preparation; stretching; annealing treatment; activation treatment; sputtered insulating coating; multi-winding and sub-packaging, since the polyaryletherketone insulating coating is provided on the surface of the spherical weld gold wire in a scaled integrated circuit and the double-layer stacked package of the present invention, the spherical weld gold wire is allowed to contact and cross during packaging, without affecting the product performance, cost and quality; two high-hardness and high-conductivity materials of cobalt and germanium are added, which greatly enhances the tensile strength of the material.

Provided is an Ir alloy which is excellent in high temperature strength while ensuring oxidation wear resistance at high temperature. The Ir alloy consists of: 7 mass % or more, and less than 10 mass % of Rh; 0.5 mass % to 5 mass % of Ta; 0 mass % to 5 mass % of at least one kind of element selected from among Co, Cr, and Ni; and Ir as the balance, wherein a total content of the Ta and the at least one kind of element selected from among Co, Cr, and Ni is 5 mass % or less.

The invention relates to a palladium-copper-silver alloy with palladium as the main component, wherein the palladium-copper-silver alloy has a weight ratio of palladium to copper of at least 1.05 and at most 1.6 and has a weight ratio of palladium to silver of at least 3 and at most 6, and wherein the palladium-copper-silver alloy contains more than 1 wt % and up to a maximum of 6 wt % of ruthenium, rhodium or ruthenium and rhodium and contains, as the remainder, palladium, copper and silver and at most 1 wt % of other metallic elements including impurities. The invention also relates to a wire, a strip or a probe needle made of such a palladium-copper-silver alloy and to the use of such a palladium-copper-silver alloy for testing electrical contacts or for making electrical contact or for producing a sliding contact.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A spark plug having a center electrode that includes a columnar noble metal tip at one end thereof, and a ground electrode that forms a spark gap between the ground electrode and a circular discharge surface of the tip. In the tip, a mass % of Pt is largest and a content percentage of Ni is more than or equal to 0 mass % and less than or equal to 40 mass %. In each of both a cross-section of the tip parallel to the discharge surface and a cross-section of the tip perpendicular to the discharge surface, particles each having an aspect ratio of more than or equal to 1 and less than or equal to 10 occupy more than or equal to 70% of observed particles in an area extending from an outline of the cross-section by a distance of 10% of a diameter of the discharge surface.

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.