The present invention relates to a high entropy alloy having more improved mechanical properties by controlling contents of additive elements in a NiCoFeMnCr 5-element alloy to control stacking fault energy, thereby controlling stability of a γ austenite phase to control a transformation mechanism, wherein the stacking fault energy is controlled in a composition range of Ni.sub.aCo.sub.bFe.sub.cMn.sub.dCr.sub.e (a+b+c+d+e=100, 1≦a≦50, 1≦b≦50, 1≦c≦50, 1≦d≦50, 10≦e≦25, and 77a−42b−22c+73d−100e+2186≦1500), and thus, the γ austenite phase exhibits a twin-induced plasticity (TWIP) property or a transformation induced-plasticity (TRIP) property in which the γ austenite phase is subjected to phase transformation into an ε martensite phase or an α′ martensite phase, under stress, thereby having improved strength and elongation at the same time to have excellent mechanical properties.

The invention discloses a Zn—Ga series alloy and a preparation method and application thereof, belonging to the technical field of medical alloys. The Zn—Ga series alloy includes Zn and Ga, and Ga accounts for 0-30 wt % but not including 0. The preparation method is to mix Zn and Ga or Zn, Ga and trace elements, then to obtain a Zn—Ga series alloy by coating paint after smelting or sintering. The mechanical properties of the prepared Zn—Ga series alloy meet the requirements of the strength and toughness of medical implant materials, and it can be degraded in vivo. It has the dual characteristics of biological corrosion degradation and suitable corrosion rate to provide long-term effective mechanical support.

A method for producing a sintered R-T-B based magnet includes: preparing a sintered R-T-B based magnet work (R is a rare-earth element; and T is at least one selected from the group consisting of Fe, Co, Al, Mn and Si, and contains Fe with no exception); preparing an RL-RH-B-M based alloy; and a diffusion step of performing heat treatment while at least a portion of the RL-RH-B-M based alloy is attached to at least a portion of a surface of the sintered R-T-B based magnet work. In the RL-RH-B-M based alloy, the content of RL is 50 mass % or higher and 95 mass % or lower, the content of RH is 45 mass % or lower (including 0 mass %), the content of B is 0.1 mass % or higher and 3.0 mass % is lower; and the content of M is 4 mass % or higher and 49.9 mass % or lower.

A method for producing a sintered R-T-B based magnet includes: preparing a sintered R-T-B based magnet work (R is a rare-earth element; and T is at least one selected from the group consisting of Fe, Co, Al, Mn and Si, and contains Fe with no exception); preparing an RL-RH-B-M based alloy; and a diffusion step of performing heat treatment while at least a portion of the RL-RH-B-M based alloy is attached to at least a portion of a surface of the sintered R-T-B based magnet work. In the RL-RH-B-M based alloy, the content of RL is 50 mass % or higher and 95 mass % or lower, the content of RH is 45 mass % or lower (including 0 mass %), the content of B is 0.1 mass % or higher and 3.0 mass % is lower; and the content of M is 4 mass % or higher and 49.9 mass % or lower.

A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

A method comprising incorporating indium into an entire Sn film for preventing the growth of whiskers from the Sn film, wherein the Sn film is applied to a metallic substrate.

A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) which is produced through atomization and a powder of an RH compound (where RH is Dy and/or Tb) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.

A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) which is produced through atomization and a powder of an RH compound (where RH is Dy and/or Tb) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.

A method comprising incorporating indium into an entire Sn film for preventing the growth of whiskers from the Sn film, wherein the Sn film is applied to a metallic substrate. The indium is present in the entire thickness of the Sn film.