A method comprising incorporating indium into an entire Sn film for preventing the growth of whiskers from the Sn film, wherein the Sn film is applied to a metallic substrate. The indium is present in the entire thickness of the Sn film.

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.

Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.

An electrode wire for electroerosion machining, the electrode wire including a metal core, made of one or more layers of metal or metal alloy. On the metal core there is a coating having an alloy different from that of the metal core, and containing more than 50% by weight of zinc. The coating includes delta-phase copper-zinc alloy.

A novel medium heavy alloy (MHA) a composition designed and processed such that the MHA has properties comprising a tensile strength of about 1527 MPa, a proof strength of about 1337 MPa, and an impact toughness of about 180 J, when the MHA is forged, and the tensile strength of about 1746 MPa, the proof strength of about 1571 MPa, and the impact toughness of about 55 J, when the MHA is agedly treated. The superior strength-toughness is attributed to the face-centered cubic matrix and/or the nano-sized secondary phases. The superior dynamic performance is attributed to the widening of adiabatic shear bands.

A method for preparing a high entropy alloy (HEA) structure includes the steps of: preparing an alloy by arc melting raw materials comprising five or more elements; drop casting the melted alloy into a cooled mold to form a bulk alloy with eutectic microstructure therein; and subjecting the bulk alloy to an acidic condition to form a bulk porous structure with eutectic microstructure therein. A high entropy alloy structure is also provided as prepared by the method.

A method for preparing a high entropy alloy (HEA) structure includes the steps of: preparing an alloy by arc melting raw materials comprising five or more elements; drop casting the melted alloy into a cooled mold to form a bulk alloy with eutectic microstructure therein; and subjecting the bulk alloy to an acidic condition to form a bulk porous structure with eutectic microstructure therein. A high entropy alloy structure is also provided as prepared by the method.

Disclosed are a BCC dual phase refractory superalloy with high phase stability and a manufacturing method therefor, the alloy comprising one or more of Ti, Zr, and Hf as Group 4 transition metals, one or more of Nb and Ta as Group 5 transition metals, and Al, and having a structure of a BCC phase, wherein the BCC phase is composed of a disordered BCC phase and an ordered BCC phase, and wherein the ordered BCC phase is formed by allowing Al, which is a BCC phase forming element, to be soluted in an area of the BCC phase where the contents of the Group 5 transition metals are more than those of the Group 4 transition metals, so that the present disclosure provides a BCC dual phase refractory superalloy with high phase stability, characterized in that when a BCC dual phase with the ordered BCC phase and the disordered BCC phase separated from each other is formed by aging, the aging condition is precisely cont rolled through the apex temperature (T.sub.c) of the BCC phase miscibility gap, expressed by (Equation 1) below.
T.sub.c(K)=881.4+331.7*x+546.7*y+893.0*x*z  (Equation 1)
(provided that, 0≤x≤1, 0≤y≤0.2, 0≤x+y≤1, and 0≤z≤1).