A method and apparatus for manufacturing a part. The part may be positioned in a chamber. The part may be comprised of a metal and may be a positioned part. A gas containing nitrogen may be sent into the chamber. An electromagnetic field may be generated in the chamber with the gas. The electromagnetic field may heat a portion of the metal in the positioned part to a temperature from about 60 percent to about 99 percent of the melting point of the metal such that the portion of the metal has a desired hardness. The portion of the metal may extend from a surface of the positioned part to a selected depth from the surface.

A method and apparatus for manufacturing a part. The part may be positioned in a chamber. The part may be comprised of a metal and may be a positioned part. A gas containing nitrogen may be sent into the chamber. An electromagnetic field may be generated in the chamber with the gas. The electromagnetic field may heat a portion of the metal in the positioned part to a temperature from about 60 percent to about 99 percent of the melting point of the metal such that the portion of the metal has a desired hardness. The portion of the metal may extend from a surface of the positioned part to a selected depth from the surface.

In the present method, a substrate to be processed, having an interlayer insulation film, is prepared (step 1). The interlayer insulation film is subjected to dry etching, while using a mask layer, thereby forming recesses (step 2). Residue is removed by dry ashing (step 3). A coating is formed on the entire surface by means of a gas process using a coating compound gas, with a molecular structure having at one terminal a first substitution group that reacts with and bonds with the surface of the interlayer insulation film, and at the other terminal a second substitution group that is hydrophilic (step 4). The coating is removed by wet cleaning (step 5). Wiring is formed in the recesses (step 6).

In the present method, a substrate to be processed, having an interlayer insulation film, is prepared (step 1). The interlayer insulation film is subjected to dry etching, while using a mask layer, thereby forming recesses (step 2). Residue is removed by dry ashing (step 3). A coating is formed on the entire surface by means of a gas process using a coating compound gas, with a molecular structure having at one terminal a first substitution group that reacts with and bonds with the surface of the interlayer insulation film, and at the other terminal a second substitution group that is hydrophilic (step 4). The coating is removed by wet cleaning (step 5). Wiring is formed in the recesses (step 6).

Exemplary embodiments described herein relate to methods and apparatus for forming a coating layer at least partially on surface of a BMG article formed of bulk solidifying amorphous alloys. In embodiments, the coating layer may be formed in situ during formation of a BMG article and/or post formation of a BMG article. The coating layer may provide the BMG article with surface hardness, wear resistance, surface activity, corrosion resistance, etc.

Exemplary embodiments described herein relate to methods and apparatus for forming a coating layer at least partially on surface of a BMG article formed of bulk solidifying amorphous alloys. In embodiments, the coating layer may be formed in situ during formation of a BMG article and/or post formation of a BMG article. The coating layer may provide the BMG article with surface hardness, wear resistance, surface activity, corrosion resistance, etc.

The present invention provides a plasma-resistant ceramic member, which includes a substrate and a ceramic coating layer formed on the substrate, in which the ceramic coating layer includes a lower layer consisting of an oxide formed on the substrate, and a surface layer in which an oxide composition component constituting the surface of the ceramic coating layer is surface-modified with a composition containing one or more anions selected from the group consisting of F.sup.− and Cl.sup.−, wherein the surface layer is a layer in which a raw material containing one or more anions selected from the group consisting of F.sup.− and Cl.sup.− is vaporized by heating and adsorbed to the surface of the ceramic coating layer, and thus modified with a composition containing one or more anions selected from the group consisting of F.sup.− and Cl.sup.−, and a method of manufacturing the same. According to the present invention, the plasma-resistant property, durability, and etching process stability of the ceramic member may be improved with low costs.

The present disclosure relates to an oxidation-resistant heat-resistant alloy and a preparing method. The oxidation-resistant heat-resistant alloy of the present disclosure, by mass percentage, includes: 2.5%-6% of Al, 24%-30% of Cr, 0.3%-0.55% of C, 30%-50% of Ni, 2%-8% of W, 0.01%-0.2% of Ti, 0.01%-0.2% of Zr, 0.01%-0.4% of Hf, 0.01%-0.2% of Y, 0.01%-0.2% of V, N<0.05%, 0<0.003%, S<0.003%, and Si<0.5%, the balance being Fe and inevitable impurities; wherein merely one of Ti and V is comprised. The method for preparing the oxidation-resistant heat-resistant alloy includes: smelting with inactive element materials.fwdarw.refining.fwdarw.adding mixed rare earth.fwdarw.adding slag.fwdarw.alloying active elements.

The present disclosure relates to an oxidation-resistant heat-resistant alloy and a preparing method. The oxidation-resistant heat-resistant alloy of the present disclosure, by mass percentage, includes: 2.5%-6% of Al, 24%-30% of Cr, 0.3%-0.55% of C, 30%-50% of Ni, 2%-8% of W, 0.01%-0.2% of Ti, 0.01%-0.2% of Zr, 0.01%-0.4% of Hf, 0.01%-0.2% of Y, 0.01%-0.2% of V, N<0.05%, 0<0.003%, S<0.003%, and Si<0.5%, the balance being Fe and inevitable impurities; wherein merely one of Ti and V is comprised. The method for preparing the oxidation-resistant heat-resistant alloy includes: smelting with inactive element materials.fwdarw.refining.fwdarw.adding mixed rare earth.fwdarw.adding slag.fwdarw.alloying active elements.

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.