Patent classifications
C23C8/80
PRESERVATION OF STRAIN IN IRON NITRIDE MAGNET
A permanent magnet may include a Fe16N2 phase in a strained state. In some examples, strain may be preserved within the permanent magnet by a technique that includes etching an iron nitride-containing workpiece including Fe16N2 to introduce texture, straining the workpiece, and annealing the workpiece. In some examples, strain may be preserved within the permanent magnet by a technique that includes applying at a first temperature a layer of material to an iron nitride-containing workpiece including Fe16N2, and bringing the layer of material and the iron nitride-containing workpiece to a second temperature, where the material has a different coefficient of thermal expansion than the iron nitride-containing workpiece. A permanent magnet including an Fe16N2 phase with preserved strain also is disclosed.
METHOD FOR THE PREOXIDATION OF STRIP STEEL IN A REACTION CHAMBER ARRANGED IN A FURNACE CHAMBER
Method for the preoxidation of high-strength strip steel. The invention relates to an improved method for the preoxidation of high-strength strip steel in a reaction chamber arranged in a furnace chamber. The reaction chamber is sealed at a strip entrance and a strip exit against gas exchange between the furnace chamber and the reaction chamber, and a gas that forms an oxidizing atmosphere in the reaction chamber is introduced, and the gas is continuously circulated within the reaction chamber
METHOD FOR SURFACE TREATMENT OF A STEEL COMPONENT BY NITRIDING OR NITROCARBURISING, OXIDISING AND THEN IMPREGNATING
Disclosed is a method for surface treatment of a steel component, providing high resistance to wear and corrosion, including nitriding or nitrocarburising to form a compound layer with a thickness of at least 8 micrometers made up of iron nitrides having phases ε and/or γ′, oxidizing to generate a layer of oxides with a thickness of 0.1-3 micrometers, and soaking in an impregnation bath during at least 5 minutes at room temperature, the bath being made up of at least 70 wt %, ±1%, of a solvent made up of a mixture of hydrocarbons formed by a C9 to C17 alkane fraction, 10 to 30 wt %, ±1%, of at least one paraffin oil formed by a C16 to C32 alkane fraction, and at least one additive such as a synthetic phenolic additive with a concentration of 0.01 to 3 wt %, ±0.1%.
METHOD FOR SURFACE TREATMENT OF A STEEL COMPONENT BY NITRIDING OR NITROCARBURISING, OXIDISING AND THEN IMPREGNATING
Disclosed is a method for surface treatment of a steel component, providing high resistance to wear and corrosion, including nitriding or nitrocarburising to form a compound layer with a thickness of at least 8 micrometers made up of iron nitrides having phases ε and/or γ′, oxidizing to generate a layer of oxides with a thickness of 0.1-3 micrometers, and soaking in an impregnation bath during at least 5 minutes at room temperature, the bath being made up of at least 70 wt %, ±1%, of a solvent made up of a mixture of hydrocarbons formed by a C9 to C17 alkane fraction, 10 to 30 wt %, ±1%, of at least one paraffin oil formed by a C16 to C32 alkane fraction, and at least one additive such as a synthetic phenolic additive with a concentration of 0.01 to 3 wt %, ±0.1%.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.
Method and steel component
A method for heat treating a steel component, which comprises the steps of: (a) carburizing the steel component with a carbon potential above 1.0, (b) carburizing the steel component with a carbon potential above 0.6, (c) quenching the steep component, and (d) subjecting the steel component to a bainitic treatment.
Method and steel component
A method for heat treating a steel component, which comprises the steps of: (a) carburizing the steel component with a carbon potential above 1.0, (b) carburizing the steel component with a carbon potential above 0.6, (c) quenching the steep component, and (d) subjecting the steel component to a bainitic treatment.
Cast product having alumina barrier layer
The present invention provides a cast product that can further enhance the stability of a barrier layer and can exhibit further superior oxidation resistance, carburization resistance, nitriding resistance, and corrosion resistance, when used under a high-temperature atmosphere, the cast product having a surface with a barrier layer comprising an Al-containing metal oxide expressed in (Al.sub.(1-x)M.sub.(x)).sub.2O.sub.3, where M is at least one of Cr, Ni, Si, and Fe, wherein the Al-containing metal oxide includes a solid solution of at least one of Cr, Ni, Si, and Fe with Al, in a relationship of Al/(Cr+Ni+Si+Fe)≥2.0 in an atomic % ratio, the barrier layer being composed of two layers consisting of a first Al-containing metal oxide layer and a second Al-containing metal oxide layer formed between the surface of the cast product and the first Al-containing metal oxide layer, and the second Al-containing metal oxide layer being greater than the first Al-containing metal oxide layer with respect to the atomic % ratio of Al/(Cr+Ni+Si+Fe), and having a thickness that is at least one fifth of a thickness of the barrier layer.
Cast product having alumina barrier layer
The present invention provides a cast product that can further enhance the stability of a barrier layer and can exhibit further superior oxidation resistance, carburization resistance, nitriding resistance, and corrosion resistance, when used under a high-temperature atmosphere, the cast product having a surface with a barrier layer comprising an Al-containing metal oxide expressed in (Al.sub.(1-x)M.sub.(x)).sub.2O.sub.3, where M is at least one of Cr, Ni, Si, and Fe, wherein the Al-containing metal oxide includes a solid solution of at least one of Cr, Ni, Si, and Fe with Al, in a relationship of Al/(Cr+Ni+Si+Fe)≥2.0 in an atomic % ratio, the barrier layer being composed of two layers consisting of a first Al-containing metal oxide layer and a second Al-containing metal oxide layer formed between the surface of the cast product and the first Al-containing metal oxide layer, and the second Al-containing metal oxide layer being greater than the first Al-containing metal oxide layer with respect to the atomic % ratio of Al/(Cr+Ni+Si+Fe), and having a thickness that is at least one fifth of a thickness of the barrier layer.