A method of depositing of a film on a substrate with controlled adhesion. The method comprises depositing the film including metal, wherein the metal is deposited on the substrate using physical vapor deposition at a pressure that achieves a pre-determined adhesion of the film to the substrate. The pre-determined adhesion allows processing of the film into a device while the film is adhered to the substrate but also allows removal of the device from the substrate.

A single-phase alloy is formed, as weight percentages, of N % of gold, M % of tungsten, with N+M=100, M8 and N60. Also disclosed is a process for preparing such an alloy use of such an alloy and decorative sheets made from such an alloy.

A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer.

Provided is a method for producing a photocatalyst electrode for water decomposition that exhibits excellent detachability between the substrate and the photocatalyst layer and exhibits high photocurrent density. The method for producing a photocatalyst electrode for water decomposition of the invention includes: a metal layer forming step of forming a metal layer on one surface of a first substrate by a vapor phase film-forming method or a liquid phase film-forming method; a photocatalyst layer forming step of forming a photocatalyst layer by subjecting the metal layer to at least one treatment selected from an oxidation treatment, a nitriding treatment, a sulfurization treatment, or a selenization treatment; a current collecting layer forming step of forming a current collecting layer on a surface of the photocatalyst layer, the surface being on the opposite side of the first substrate; and a detachment step of detaching the first substrate from the photocatalyst layer.

A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MC.sub.x. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

The present invention inter alia relates to a supported silica bilayer (SiO.sub.2 bilayer) film. In the supported silica bilayer film, the silica bilayer film consists of two atomic layers of corner-sharing SiO.sub.4 tetrahedra, forms in itself a chemically saturated structure and contains pores. The silica bilayer film has a first (1) and a second side (2) and is supported on the first side (1) by a removable polymer film. The invention further relates to a process for producing the supported silica bilayer film, a process for transferring a silica bilayer film, a free-standing silica bilayer film, a stack comprising a plurality of silica bilayer films, a filed-effect transistor having a gate oxide comprising the silica bilayer film or a stack thereof and the use of a silica bilayer film.

An inorganic structure body has a free-standing structure including a fibrous member and/or a shell. The fibrous member and/or the shell include a metal and/or an inorganic material and have a three-dimensionally continuous configuration. The free-standing structure may have a structure that is based on a nonwoven fabric or a porous membrane used as a substrate.

A thin-walled heat exchanger includes a component having at least one thermal transfer structure. The thermal transfer structure includes a wall having a thickness ranging from about 0.003 in to about 0.010 in.

Films including a water-soluble layer and a vapor-deposited inorganic coating are disclosed. The films exhibit enhanced barrier properties.

There is provided a laminate in which a decrease in the release function of a release layer can be suppressed even when the laminate is heat-treated under either temperature condition of low temperature and high temperature. This laminate includes a carrier; an adhesion layer on the carrier and containing a metal M.sup.1 having a negative standard electrode potential; a release-assisting layer on a surface of the adhesion layer opposite to the carrier and containing a metal M.sup.2 (M.sup.2 is a metal other than an alkali metal and an alkaline earth metal); a release layer on a surface of the release-assisting layer opposite to the adhesion layer; and a metal layer on a surface of the release layer opposite to the release-assisting layer, and T.sub.2/T.sub.1, a ratio of a thickness of the release-assisting layer, T.sub.2, to a thickness of the adhesion layer, T.sub.1, is more than 1 and 20 or less.