The invention relates to a device for the transfer of a transfer layer from a substrate, in particular from a growth substrate, to a carrier substrate.

A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.

Novel polymerizable ionic liquid compounds, and polymerizable compositions are described. The compositions comprise an acid functional monomer or acid-functional copolymer (or conjugate base thereof), and an imidazole compound (or conjugate acid thereof). The polymerizable compositions may be cast and cured to form a coating on a substrate, the coating capable of swelling on exposure to water so as to release from that substrate.

A method of assembling an implantable electrode array from a coupon (108) formed from plastically deformable material. Layers of material are disposed on the coupon to form the electrodes (48) and conductors (62) of one or more electrode arrays. Sections of the coupon on which the electrodes and conductors are removed, along with the electrodes and conductors to form the electrode arrays. The removed sections of the coupon thus function as plastically deformable carriers (74) for the arrays (40).

Nano-thick flakes that are either flat, and specularly-reflective in visible light or that have microroughness intentionally controlled to disperse or interfere with visible light. Coatings and inks utilizing such flakes. Method for fabrication of such flakes in partial vacuum includes the repeated multiple times deposition of a release layer over a substrate surface and a flake layer over the release layer to form a multilayer structure further reduced to individual flakes. Reactive metal is passivated inline with the deposition of the flake layer for superior corrosion resistance. Chemically-functional materials are optionally added to the release material to transfer their functionality to the surface of flake layer to create unique functional properties on a flake surface before the multilayer structure is removed from the substrate.

A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.

The present invention inter alia relates to a supported silica bilayer (SiO.sub.2 bilayer) film. In the supported silica bilayer film, the silica bilayer film consists of two atomic layers of corner-sharing SiO.sub.4 tetrahedra, forms in itself a chemically saturated structure and contains pores. The silica bilayer film has a first (1) and a second side (2) and is supported on the first side (1) by a removable polymer film. The invention further relates to a process for producing the supported silica bilayer film, a process for transferring a silica bilayer film, a free-standing silica bilayer film, a stack comprising a plurality of silica bilayer films, a filed-effect transistor having a gate oxide comprising the silica bilayer film or a stack thereof and the use of a silica bilayer film.

Provided are thin leaf-like indium particles having a first peak and a second peak at a greater particle diameter than a particle diameter at which the first peak appears in a volume-based particle size distribution representing a relationship between particle diameters of indium particles and ratios by volume of the indium particles at the particle diameters, wherein a volume V1 of the indium particles at the first peak and a volume V2 of the indium particles at the second peak satisfy a formula (V1/V2)10025%.

Disclosed is a nanowire bundle array. Particularly, the nanowire bundle array according to an embodiment of the present disclosure includes a plurality of nanowire assemblies arranged therein. Each of the nanowire assemblies includes nanowires, a surface of at least a portion of which is coated with a thin metal film and the widths between the nanowires gradually decrease from one end to another end.

A method is provided for producing a foil made of an electrically conductive material. The foil consists of the same electrically conductive material along the extension of the foil thickness. A flexible substrate is first introduced into a working chamber; a layer made of the electrically conductive material is deposited on at least one surface region of the flexible substrate using a vacuum coating process; and the first layer is then removed from the flexible substrate. Either an ion-etching process is carried out at least on the surface region of the flexible substrate prior to depositing the layer made of the electrically conductive material and/or the layer made of the electrically conductive material is heated during and/or after the layer is deposited.