Method for coloured coating on a watchmaking or jewellery external part component, comprising at least one visible surface prepared in advance on a substrate, this method comprising a step of vacuum-deposition of at least one main layer of titanium and silicon nitride (Ti, Si.sub.k)N.sub.x or of titanium and silicon nitride doped with oxygen (Ti, Si.sub.k)N.sub.xO.sub.y.

Provided is a coated cutting tool having a base material side single layer portion and a laminated portion provided as a hard coating in order from a base material side. The base material side single layer portion is formed of a nitride-based hard coating in which a proportion of Al is highest among metal (including metalloid) elements, a sum of Al and Cr in a content ratio (atomic ratio) is 0.9 or more, and at least B is contained. In the laminated portion, a nitride-based a layer in which a proportion of Ti is highest among metal (including metalloid) elements and at least B is contained, and a nitride-based b layer in which a proportion of Al is highest among metal (including metalloid) elements and at least Cr and B are contained are alternately laminated.

A coated body having a substrate and a wear-resistant coating applied to the substrate by physical vapor deposition, the coating comprising a main layer applied to the substrate in a thickness of 1 to 10 μm, wherein said main layer is formed from a nitride of aluminum and at least one other metal from the group consisting of Ti, Cr, Si, Zr and combinations thereof; and a cover layer adjacent to the main layer at a thickness of 0.1 to 5 μm, wherein the cover layer comprises at least one alternating layer consisting of an oxynitride layer and a nitride layer arranged over the oxynitride layer, wherein the oxynitride layer is formed from an oxynitride of aluminum and optionally further metals from the group consisting of chromium, hafnium, zirconium, yttrium, silicon and combinations thereof, and the nitride layer is formed from a nitride of aluminum and at least one other metal from the group consisting of Ti, Cr, Si, Zr and combinations thereof.

A surface-coated cutting tool comprises a hard coating layer that includes a TiAlN layer and is provided on a surface of a cutting tool body. In case the composition of the TiAlN layer is expressed by a formula: (Ti.sub.xAl.sub.1-x)N, 0.10≤x≤0.35 (here, x is in atomic ratio) is satisfied. In the TiAlN layer, a high Ti band-like region is present in a direction at 30 degrees or less with respect to a line normal to the surface of the cutting tool body. An average composition X of the Ti component in the high Ti band-like region satisfies (x+0.01)≤X≤(x+0.05), an average width W of the high Ti band-like region is 30 to 500 nm, and an average area ratio St of the high Ti band-like region is 3 to 50 area %.

A surface-coated cutting tool includes a base material and a coating film provided on a surface of the base material, wherein the coating film includes a first alternating layer provided on the base material and a second alternating layer provided on the first alternating layer, the first alternating layer includes A and B layers, the second alternating layer includes C and D layers, each of one or plurality of the A layers is composed of a nitride or carbonitride of Al.sub.aCr.sub.bM1.sub.(1-a-b), each of one or plurality of the B layers is composed of a nitride or carbonitride of Al.sub.cTi.sub.dM2.sub.(1-c-d), each of one or plurality of the C layers is composed of a nitride or carbonitride of Ti.sub.eSi.sub.fM3.sub.(1-e-f), and each of one or plurality of the D layers is composed of a nitride or carbonitride of Ti.sub.gSi.sub.hM4.sub.(1-g-h).

A deposition system includes a deposition source and a scanning stage disposed within a deposition path of the deposition source. The scanning stage includes a support platform configured to support a wafer thereon, and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform with respect to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scanning stage, the controller configured to control the mechanical actuator to translate the wafer with respect to the slit such that an angle of deposition remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is out of alignment with the slit from contacting the wafer.

A method and apparatus for forming an anode electrode structure are provided. The deposition apparatus comprises a first spool chamber capable of housing a storage spool operable to provide the flexible substrate. The deposition apparatus further comprises a first deposition chamber arranged downstream from the first spool chamber. The first deposition chamber comprises a first coating drum capable of guiding the flexible substrate past a first plurality of deposition units capable of depositing lithium metal on the flexible substrate. The deposition apparatus further comprises a second deposition chamber arranged downstream from the first deposition chamber. The second deposition chamber comprises a second coating drum capable for guiding the flexible substrate past a second deposition unit comprising an evaporation crucible capable of depositing a ceramic protective film on the lithium metal film.

A method of providing nuclear fuel cladding in a radioactive fuel reactor includes coating the nuclear fuel cladding with a coating system and exposing the nuclear fuel cladding in pure water at at least 360 C. and a saturation pressure of 18.7 MPa, where the coating system is maintained without spallation or delamination after at least 3 days. The coating system includes a multilayer coating on the substrate including (i) one or more layers including at least a ternary metal compound and at least a binary metal compound and (ii) a top coat layer that does not include aluminum, where the ternary metal compound includes TiCrN, TiNbN, TiSiN, TiHfN, TaHfN, TaNbN, TiCrC, TiNbC, TiSiC, TiHfC, TaHfC, TaNbC, TiCrCN, TiNbCN, TiSiCN, TiHfCN, TaHfCN, TaNbCN, or combinations thereof and the binary metal compound includes CrN, NbN, TaN, Si3N4, HfN, CrC, HfC, TaC, NbC or combinations thereof.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.

A high-temperature-resistant hard composite coating is provided, and includes a CrN transition layer and a nanocomposite layer disposed on the surface of a substrate in sequence. The nanocomposite layer comprises AlCrSiN layers and MeN layers alternately arranged on the surface of the CrN transition layer in sequence. Me comprises W, Nb, or Hf. Also provided are a method for preparing the high-temperature-resistant hard composite coating, and a coated cutter.