Provided is a hard coating film having excellent sand abrasion resistance. The present invention relates to a hard coating film (20) including a nitride containing Al and Cr as main components, the hard coating film (20) having a thickness of 6 μm or more.

A cutting tool including a base material and a hard layer provided on the base material, in which the hard layer is composed of a compound represented by Ti.sub.aAl.sub.bB.sub.cN, an atomic ratio a is 0.25 or more and less than 0.55, an atomic ratio b of is 0.45 or more and less than 0.75, an atomic ratio c of is more than 0 and 0.1 or less, a sum of the atomic ratio a, the atomic ratio b and the atomic ratio c is 1, a ratio I.sub.(200)/I.sub.(002) of an intensity I.sub.(200) of an X-ray diffraction peak of a (200) plane to an intensity I.sub.(002) of an X-ray diffraction peak of a (002) plane in the hard layer is 2 to 10, and a full width at half maximum of the X-ray diffraction peak of the (002) plane is 2 degrees to 8 degrees.

A chamber of a hybrid chemical and physical vapor deposition (HybCPVD) provides high-quality and uniform films on relatively large multiple wafers per growth run at reasonably high deposition rates using a scalable high-throughput process. Transition-metal-alloyed III-N single-crystalline and textured thin films are epitaxially and non-epitaxially deposited on a suitable substrate (of, for example, silicon or a metal such as aluminum or titanium) by providing a mixture of various gases in a deposition/growth chamber. The precursors for the chemical reactions include vapor phase of elements of transition metals, vapor phase of chlorides, and vapor phase of hydride. This growth technique provides high growth rate and high-quality epitaxial materials.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate, capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer, capable of conducting ions, formed on the first surface. The first ceramic-containing layer has a thickness in a range from about 1,000 nanometers to about 5,000 nanometers. The separator further comprises a second ceramic-containing layer, capable of conducting ions, formed on the second surface. The second ceramic-containing layer is a binder-free ceramic-containing layer and has a thickness in a range from about 1 nanometer to about 1,000 nanometers.

The present disclosure provides a multilayer coated cutting material having increased wear resistance at high temperatures, a method for manufacturing the same, and a cutting tool insert for mechanical machining including the same. According to an embodiment of the present disclosure, the multilayer coated cutting material includes a cemented carbide, cermet, ceramic, a cubic crystal boron nitride-based material or a hard alloy body of high-speed steel, and a cutting layer positioned on the base material and configured in multiple layers.

The present disclosure provides a multilayer coated cutting material having increased wear resistance at high temperatures, a method for manufacturing the same, and a cutting tool insert for mechanical machining including the same. According to an embodiment of the present disclosure, the multilayer coated cutting material includes a cemented carbide, cermet, ceramic, a cubic crystal boron nitride-based material or a hard alloy body of high-speed steel, and a cutting layer positioned on the base material and configured in multiple layers.

A cathodic arc evaporation apparatus including a target which has a target surface including an active surface from where material can be evaporated in a cathodic arc process; a confinement surrounding an outer boarder of the target surface; an anode having an electron receiving surface, the anode encompassing at least one of the target and the confinement in at least one of a target plane and an axial distance in front of the active surface; and a magnetic guidance system adapted to provide a magnetic field at the target surface being essentially in parallel to at least an outer region of the target surface so that magnetic field lines are in parallel to the target surface or inclined to it in an acute angle α, whereat an active surface is defined in a surface area where magnetic field lines enter the target surface in an acute angle α≤45°.

A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces.

A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX.sub.2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.