A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average ion energy. The method further includes adjusting the first average ion energy of the carbon-based ions to a second average ion energy by supplying continuous wave direct current power to the plasma processing chamber concurrently with the continuous wave radio frequency power and forming a carbon hard mask at a substrate within the plasma processing chamber by delivering the carbon-based ions having the second average ion energy to the substrate.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

A coating film has a lamination unit including a first layer and at least one of a second layer and a third layer. The first layer is a nitride or the like of a first material represented by (Cr.sub.1-a-b-cAl.sub.a[Ni.sub.1-dZr.sub.d].sub.bX.sub.c). X is at least one element selected from Ti, Nb, Si, B, W, and V. a, b, c, and d represent atomic concentrations. The second layer is a nitride or the like of the second material represented by (Al.sub.cCr.sub.1-e-fZ.sub.f). Z is at least one element selected from Si, Y, and B. e and f represent atomic concentrations. The third layer is a nitride or the like of the third material represented by (Al.sub.gCr.sub.1-g).

A method for coating a substrate 11 is disclosed. The method includes at least the following steps: depositing a first base layer 22 comprising a nitride of at least Al and Cr on the substrate 11 by physical vapor deposition at a gradually increasing substrate bias voltage from a first substrate bias voltage to a second substrate bias voltage; depositing a second base layer 23 comprising a nitride of at least Al and Cr on the first base layer 22 by physical vapor deposition at a constant substrate bias voltage that is greater or equal to the second substrate bias voltage; and depositing an outermost indicator layer 24 on the second base layer 23, wherein the outermost indicator layer 24 comprises a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr, wherein the outermost indicator layer 24 is deposited by physical vapor deposition at a substrate bias voltage that is less than the constant substrate bias voltage applied during deposition of the second base layer 23.

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10.sup.−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO.sub.3.

An article has a body having a protective coating. The protective coating is a thin film that includes a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

The present invention addresses the problem of providing a barrier resin film exhibiting excellent barrier properties without adopting a multilayer structure such as the structures used by the prior art. A barrier resin film obtained by forming a vapor-deposited aluminum oxide film on the surface of a resin substrate, wherein an elementally bonded structural unit represented by Al.sub.3 is distributed in the vapor-deposited aluminum oxide film, and the intensity ratio (Al.sub.3/Al.sub.2O.sub.3×100) of the maximum Al.sub.3 concentration elementally bonded structure section according to Time-of-Flight secondary ion mass spectrometry (TOF-SIMS) is 1-20, inclusive.

A layered stack that can be used as an oxidation and chemical barrier with superalloy substrates, including Ni, Ni—Co, Co, and Ni-aluminide based substrates, and methods of preparing the layered stack. The layer system can be applied to a substrate in a single physical vapor deposition process with no interruption of vacuum conditions.