A coated cutting tool is provided which allows for satisfactory machining over a long period of time, particularly in the machining of difficult-to-machine materials with low thermal conductivity. The coated cutting tool includes a substrate and a coating layer formed on a surface of the substrate, wherein: at least one layer of the coating layer comprises a predetermined layer containing a compound having a composition represented by the formula: (Al.sub.XTi.sub.1-X)N [wherein x denotes an atomic ratio of the Al element based on a total of the Al element and the Ti element, and x satisfies 0.60≤x≤0.85]; a value of an orientation index TC (311) of a cubic (311) plane of the predetermined layer is from 2.5 or more to 4.2 or less; and an average thickness of the predetermined layer is from 1.0 μm or more to 12.0 μm or less.

A valve component comprising a substrate with a sliding surface, the sliding surface being designed to be subjected to sliding against another surface during operation of the valve, wherein at least a portion of the sliding surface is coated with a coating comprising an under-layer comprising tungsten and an upper-layer deposited atop the under-layer, said upper-layer comprising diamond-like-carbon, wherein the under-layer comprises carbon and has a layer thickness of at least 11 micrometers, and the upper-layer has a lower coefficient of friction than the under-layer and has a layer thickness of at least 1.5 micrometers.

A coating-substrate combination includes: a Ni-based superalloy substrate comprising, by weight percent: 2.0-5.1 Cr; 0.9-3.3 Mo; 3.9-9.8 W; 2.2-6.8 Ta; 5.4-6.5 Al; 1.8-12.8 Co; 2.8-5.8 Re; 2.8-7.2 Ru; and a coating comprising, exclusive of Pt group elements, by weight percent: Ni as a largest content; 5.8-9.3 Al; 4.4-25 Cr; 3.0-13.5 Co; up to 6.0 Ta, if any; up to 6.2 W, if any; up to 2.4 Mo, if any; 0.3-0.6 Hf; 0.1-0.4 Si; up to 0.6 Y, if any; up to 0.4 Zr, if any; up to 1.0 Re, if any.

A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100/Is≤12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

A coated cutting tool and a process for the production thereof id provided. The coated cutting tool consists of a substrate body of WC-Co based cemented carbide and a coating, the coating including a first (Ti,Al)N multilayer, a first gamma-aluminium oxide layer, and a set of alternating second (Ti,Al)N multilayers and second gamma-aluminium oxide layers.

A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.

Provided are a conductive film and a preparation method for the same, which relate to the technical field of conductive films. The preparation method for the conductive film includes: forming a metal process layer on a surface of an insulating layer by means of evaporation deposition, wet electroplating or chemical plating; forming a metal transition layer on a surface of the metal process layer facing away from the insulating layer by means of magnetron sputtering; and forming a metal functional layer on a surface of the metal transition layer facing away from the metal process layer. The conductive film obtained by this preparation method can have relatively good conductivity and density while having a relatively thick metal conductive layer.

Provided are a conductive film and a preparation method for the same, which relate to the technical field of conductive films. The preparation method for the conductive film includes: forming a metal process layer on a surface of an insulating layer by means of evaporation deposition, wet electroplating or chemical plating; forming a metal transition layer on a surface of the metal process layer facing away from the insulating layer by means of magnetron sputtering; and forming a metal functional layer on a surface of the metal transition layer facing away from the metal process layer. The conductive film obtained by this preparation method can have relatively good conductivity and density while having a relatively thick metal conductive layer.