A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

An evaporating mask plate, an evaporating mask plate set and an evaporating system are provided. The evaporating mask plate includes a mask pattern plate. The evaporating mask pattern plate includes an evaporating area and a test area located around the evaporating area. The test area is provided with at least two test element groups located in different regions of the test area, and each test element group includes at least one test hole for alignment.

An evaporating mask plate, an evaporating mask plate set and an evaporating system are provided. The evaporating mask plate includes a mask pattern plate. The evaporating mask pattern plate includes an evaporating area and a test area located around the evaporating area. The test area is provided with at least two test element groups located in different regions of the test area, and each test element group includes at least one test hole for alignment.

Provided is a mask assembly. The mask assembly includes a mask frame and a mask. The mask is coupled to the mask frame to distinguish first to third deposition areas from each other. Each of the first and third deposition areas has a first width greater than a reference width in a first direction and a second width less than the first width in a second direction. The second deposition area has a third width less than the first width in the first direction and a fourth width less than the reference width in the second direction.

A mask apparatus may include a frame including first and second sides opposing each other in a first direction across an opening and third and fourth sides opposing each other in a second direction crossing the first direction across the opening. A manufacturing apparatus may include a pressing mechanism that presses the first and second sides toward the opening, a displacement measuring mechanism that measures amounts of deformation of the first and second sides in the first direction, and a fixing unit that fixes a mask to the first and second sides. The pressing mechanism may include five or more pressing units that are arranged at intervals of 500 mm or less in the second direction and that press the first side and five or more pressing units that are arranged at intervals of 500 mm or less in the second direction and that press the second side.

A deposition device including an injection block and a print die is provided, which allows for vertical movement of the injection block while still maintaining connection between the print die and external gas sources. Also disclosed is an injection block suitable for such devices, which provides improved vertical range of motion and thermal consistency compared to conventional injection block devices.

A sputter deposition apparatus including: a remote plasma generation arrangement arranged to provide a plasma for sputter deposition of target material within a sputter deposition zone; a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma in the sputter deposition zone a substrate provided within the sputter deposition zone; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate. The confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited: target material as a first region on the substrate; target material as a second region on the substrate; and an intermediate region between the first and second region with no target material.

A sputter deposition apparatus including: a remote plasma generation arrangement arranged to provide a plasma for sputter deposition of target material within a sputter deposition zone; a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma in the sputter deposition zone a substrate provided within the sputter deposition zone; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate. The confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited: target material as a first region on the substrate; target material as a second region on the substrate; and an intermediate region between the first and second region with no target material.

A sputter deposition apparatus including: a plasma generation arrangement arranged to provide single plasma for sputter deposition of target material within a sputter deposition zone; a conveyor system arranged to convey a substrate through the sputter deposition zone in a conveyance direction; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate utilising the plasma such that as the substrate is conveyed through the sputter deposition zone in use there is deposited: a first stripe on the substrate; and a second stripe on the substrate. The first stripe includes at least one of: a different density of the target material or a different composition of the target material than the second stripe.

A method of manufacturing a metal mask includes calendering a metal material, so as to form a metal mask substrate, where the metal mask substrate includes a surface and a plurality of grooves formed in the surface, and the grooves all extend in a direction. The surface has at least one sampling region, while at least two grooves are distributed in the sampling region, where an average area ratio of the area of the grooves within the sampling region to the area of the sampling region ranges between 45% and 68%.