The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

A shadow mask is used for patterning in a film deposition process in which a film deposition material is deposited by vapor deposition or sputtering. The shadow mask includes a first resin film provided on a side facing a film deposition target, a metal part having a slit formed therein and provided on top of the first resin film, and a second resin film provided in such a way as to cover at least a part of a top of the metal part. The second resin film is provided on a side exposed to a film deposition material, and a surface of the second resin film is roughened.

A shadow mask is used for patterning in a film deposition process in which a film deposition material is deposited by vapor deposition or sputtering. The shadow mask includes a first resin film provided on a side facing a film deposition target, a metal part having a slit formed therein and provided on top of the first resin film, and a second resin film provided in such a way as to cover at least a part of a top of the metal part. The second resin film is provided on a side exposed to a film deposition material, and a surface of the second resin film is roughened.

The present invention provides an apparatus for forming a uniform, large scale nanoparticle coating on a substrate. The apparatus comprises a source of vaporised metal nanoparticles. The apparatus further comprises a first plate (20) providing an array of spaced apart first apertures (22). The apparatus further comprises a second plate (24) aligned with and spaced apart from the first plate (20). The second plate (24) provides an array of spaced apart second apertures 26. Each second aperture (26) of the second plate (24) is aligned with a first aperture (22) of the first plate (20).

A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.

A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m.sup.2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m.sup.2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO.sub.2 coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.

Disclosed is a thermal barrier coating system for components of a turbomachine, especially for high temperature-stressed or hot gas-stressed components of a turbomachine, comprising a ceramic coating of fully or partially stabilized zirconium oxide, and an oxide cover coating which comprises aluminum and at least one element from the group lanthanum, magnesium, silicon, calcium and sodium. The aluminum oxide exists at least partially as free α-Al.sub.2O.sub.3. Also disclosed is a method for producing a corresponding thermal barrier coating system.