Patent classifications
C23C14/22
OVJP SYSTEM AND SUBLIMATION SOURCE
Organic vapor jet printing (OVJP) devices and techniques are provided that use a solid materials sublimation source to provide material for deposition on a substrate. Carrier gas from a carrier gas source entrains vapor from the solid material within each sublimation source for transport to a print head within a deposition chamber. The sublimation source includes a sufficiently long internal flow path to achieve an acceptable level of material saturation of the carrier gas.
Vacuum Coating Device
The present invention discloses a vacuum coating device, comprising: a crucible; an induction heater provided on the periphery of the crucible; a flow distribution box connected to the top of said crucible via a steam pipe. Wherein said flow distribution box is provided inside with a horizontal pressure stabilizing plate, said flow distribution box is connected on the top with a nozzle, said steam pipe is provided with a pressure regulating valve, and said pressure stabilizing plate has a multi-hole structure. The lower surface of said pressure stabilizing plate is connected to a horizontal flow suppression plate, and a space is formed between the side of said flow suppression plate and the inner wall of said flow distribution box. A jet moderating zone is formed between the joint where said flow distribution box and said steam pipe are connected and the lower surface of said pressure stabilizing plate, and a jet accelerating zone is formed between the upper surface of said pressure stabilizing plate and the joint where said flow distribution box and said nozzle are connected. When the high-temperature steam reaches the low-temperature steel plate, a uniform coating can be formed on the steel plate surface.
NANO-TWINNED STRUCTURE ON METALLIC THIN FILM SURFACE AND METHOD FOR FORMING THE SAME
A nano-twinned structure on a metallic thin film surface is provided. The nano-twinned structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a metallic thin film including Ag, Cu, Au, Pd or Ni over the adhesive-lattice-buffer layer. The bottom region of the metallic thin film has equi-axial coarse grains. The surface region of the metallic thin film contains parallel-arranged high-density twin boundaries (Σ3+Σ9) with a pitch from 1 nm to 100 nm. The quantity of the parallel-arranged twin boundaries is 50% to 80% of the total quantity of twin boundaries in the cross-sectional view of the metallic thin film. The parallel-arranged twin boundaries include 30% to 90% [111] crystal orientation. The nano-twinned structure on the metallic thin film surface is formed through a post-deposition ion bombardment on the evaporated metallic thin film surface after the evaporation process.
Sputtering apparatus
A sputtering apparatus includes a base on which a substrate is mounted, an annular member disposed at an outer periphery of the base to surround a side surface and a backside of the substrate without in contact with the substrate, and an edge cover that covers an outer edge of an upper surface of the substrate mounted on the base. The annular member has a first surface facing the backside of the substrate mounted on the base with a gap, a second surface facing the side surface of the substrate mounted on the base with a gap, and a tapered surface formed at a corner portion between the first surface and the second surface.
ELECTROCHROMIC FILMS AND RELATED METHODS THEREOF
EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.
Atomic layer deposition of selected molecular clusters
Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.
Multi-layered ventilation apparatus and methods of manufacturing thereof
Disclosed is an apparatus for venting buildings, specifically attic spaces, such vents being predominantly shape-conform to the components from which a wall or a roof is built (typically tiles, in the context of roofs), the vent typically being fabricated from a metallic, plastic, or ceramic core as well as one or more layers from other materials or compounds which modify the overall characteristics of the vent, such as the surface characteristics. Furthermore disclosed are methods of manufacturing such ventilation apparatuses.
Multi-layered ventilation apparatus and methods of manufacturing thereof
Disclosed is an apparatus for venting buildings, specifically attic spaces, such vents being predominantly shape-conform to the components from which a wall or a roof is built (typically tiles, in the context of roofs), the vent typically being fabricated from a metallic, plastic, or ceramic core as well as one or more layers from other materials or compounds which modify the overall characteristics of the vent, such as the surface characteristics. Furthermore disclosed are methods of manufacturing such ventilation apparatuses.
Methods for Perovskite Device Processing by Vapor Transport Deposition
Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
Electrochromic films and related methods thereof
EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.