A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises Y.sub.3Al.sub.5O.sub.12 having a dielectric constant of 9.76+/−up to 30% and a hermiticity of 4.4E-10 cm.sup.3/s+/−up to 30%.

A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises Y.sub.3Al.sub.5O.sub.12 having a dielectric constant of 9.76+/−up to 30% and a hermiticity of 4.4E-10 cm.sup.3/s+/−up to 30%.

The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.

Embodiments of the disclosed subject matter provide a device including a carrier plate, and a die including a mating surface with a patterned thin film of metal or metal oxide surface bonded to the carrier plate using a solder preform with voids that overlay the patterned thin film on the die, where the oxide surface is disposed opposite a moat in a mating surface of the carrier plate, and where the voided regions remain free of solder when the solder is reflowed.

Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

A plasma processing apparatus includes a microwave generation unit configured to generate a microwave, a processing vessel configured to introduce the microwave thereinto, and a gas supply mechanism configured to supply a gas into the processing vessel, plasma being generated within the processing vessel so that a plasma processing is performed on a processing target object. The microwave generation unit includes an oscillation circuit configured to oscillate the microwave, a pulse generation circuit configured to oscillate a control wave having a predetermined frequency bandwidth at a predetermined cycle, and a frequency modulation circuit configured to modulate a frequency of the microwave to a modulated wave having the predetermined frequency bandwidth by the control wave and output the modulated wave, and the frequency modulation circuit alternately and repeatedly outputs the modulated wave and a non-modulated microwave at the predetermined cycle.

A plasma processing apparatus includes a microwave generation unit configured to generate a microwave, a processing vessel configured to introduce the microwave thereinto, and a gas supply mechanism configured to supply a gas into the processing vessel, plasma being generated within the processing vessel so that a plasma processing is performed on a processing target object. The microwave generation unit includes an oscillation circuit configured to oscillate the microwave, a pulse generation circuit configured to oscillate a control wave having a predetermined frequency bandwidth at a predetermined cycle, and a frequency modulation circuit configured to modulate a frequency of the microwave to a modulated wave having the predetermined frequency bandwidth by the control wave and output the modulated wave, and the frequency modulation circuit alternately and repeatedly outputs the modulated wave and a non-modulated microwave at the predetermined cycle.

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.