A method for producing an aluminum layer is provided. The method includes depositing a metallic seed layer on a substrate, the seed layer having a thickness of not more than 5 nm, and also includes applying the aluminum layer to the seed layer, wherein the aluminum layer has a thickness of more than 30 nm. Further, an optical element, which can be a mirror layer, is provided including the metallic seed layer and the aluminum layer.

A method for producing an aluminum layer is provided. The method includes depositing a metallic seed layer on a substrate, the seed layer having a thickness of not more than 5 nm, and also includes applying the aluminum layer to the seed layer, wherein the aluminum layer has a thickness of more than 30 nm. Further, an optical element, which can be a mirror layer, is provided including the metallic seed layer and the aluminum layer.

A coated cutting tool which has, on a surface of a substrate, a layer A of a face-centered cubic lattice structure which is a nitride or carbonitride containing 50 atom % or more of Al, 20 atom % or more of Cr, 85 atom % or more of Al and Cr, and 4 atom % or more and 15 atom % or less of Si, and a layer B provided on the layer A. The layer B is a nitride or carbon nitride which contains 70 atom % or more and 90 atom % or less of Ti, 5 atom % or more and 20 atom % or less of Si, and 1 atom % or more and 10 atom % or less of Nb or Cr in terms of a total amount of metal (including metalloid) elements, and has the face-centered cubic lattice structure.

Provided is a carrier-attached metal foil which can suppress the number of foreign matter particles on the surface of a metal layer to enhance circuit formability, and can keep stable releasability even after heating at a high temperature of 240° C. or higher (for example, 260° C.) for a long period of time. The carrier-attached metal foil includes a carrier, a release functional layer provided on the carrier, the release functional layer including a metal oxynitride, and a metal layer provided on the release functional layer.

A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.

Embodiments relate to nanoporous copper interconnects on a first body for electrically connecting to a second body. To fabricate the nanoporous copper interconnect, a zinc-copper alloy is deposited on recesses on the surface of the first body, and then the zinc is removed from the zinc-copper alloy to obtain nanoporous copper. The first body and the second body can be attached using bonding between oxide surfaces of the two bodies or be provided with underfill between the two bodies. The nanoporous copper electrically connects to an active layer or electrical components of the first body and the second bodies. Using nanoporous copper as interconnects is advantageous, among other reasons, because it can be formed at a low temperature, it is compatible with a standard complementary metal-oxide-semiconductor (CMOS) process, it provides good electrical conductivity, and it is less likely to cause issues due to migration of material.

Embodiments relate to nanoporous copper interconnects on a first body for electrically connecting to a second body. To fabricate the nanoporous copper interconnect, a zinc-copper alloy is deposited on recesses on the surface of the first body, and then the zinc is removed from the zinc-copper alloy to obtain nanoporous copper. The first body and the second body can be attached using bonding between oxide surfaces of the two bodies or be provided with underfill between the two bodies. The nanoporous copper electrically connects to an active layer or electrical components of the first body and the second bodies. Using nanoporous copper as interconnects is advantageous, among other reasons, because it can be formed at a low temperature, it is compatible with a standard complementary metal-oxide-semiconductor (CMOS) process, it provides good electrical conductivity, and it is less likely to cause issues due to migration of material.

A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.