The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

A method for fabricating a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) write apparatus is described. The HAMR write apparatus is coupled with a laser for providing energy and has a media-facing surface (MFS) configured to reside in proximity to a media during use. The method includes providing a stack on an underlayer. The stack includes an endpoint detection layer, an optical layer and an etchable layer. The optical layer is between the etchable and endpoint detection layers. The etchable layer is patterned to form a mask. A portion of the optical layer is removed. A remaining portion of the optical layer has a bevel at a bevel angle from the MFS location. The bevel angle is nonzero and acute. The NFT is provided such that the NFT has an NFT front surface adjoining the bevel and at the bevel angle from the MFS location.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

A casing component according to an embodiment of the present technology includes a decorating film and a casing part. The decorating film is formed on a base film by vapor deposition and includes a metal layer, fine cracks being formed in the metal layer by stretching the base film. The casing part has a decorated region, the decorating film being adhered to the decorated region.

A film-forming apparatus is provided. The film-forming apparatus includes: a head connected to an evaporation source and having a plurality of opening portions; and a heater wound around the head. The heater has a first region at a side of the evaporation source and a second region at an opposite side of the first region from the evaporation source. The heater is arranged ununiformly in comparison between the first region and the second region. Furthermore, a film-forming method by using this film-forming apparatus is provided.

A film-forming apparatus is provided. The film-forming apparatus includes: a head connected to an evaporation source and having a plurality of opening portions; and a heater wound around the head. The heater has a first region at a side of the evaporation source and a second region at an opposite side of the first region from the evaporation source. The heater is arranged ununiformly in comparison between the first region and the second region. Furthermore, a film-forming method by using this film-forming apparatus is provided.

Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.

A high-temperature component made of a refractory metal or a refractory metal alloy, includes a coating for increasing thermal emissivity. The coating is formed substantially of tungsten and rhenium, i.e. of at least 55 wt. % rhenium and at least 10 wt. % tungsten, and has a Re3W phase of at least 35 wt. %. A process for producing a high-temperature component having a coating for increasing thermal emissivity, is also provided.

The present disclosure relates generally to thin metal films having an ultra-flat surface and methods of their preparation. In particular, the ultra-flat thin metal films comprise FCC metals. Preferably, the thin metal films are attached to a substrate. Preferred substrates comprise chalcogenides and dichalcogenides. Beneficially, the thin metal films described herein can be prepared at ambient temperatures.