According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.

The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Effective techniques for patterning carbon nanotube (CNT) sheets are disclosed herein. A carbon nanotube forest is grown on a catalyst-incorporated substrate, CNT sheets are drawn from the carbon nanotube forest, the CNT sheets are stacked on a substrate, followed by etching the CNT sheets by using a shadow mask through a controlled etch process. In some implementations, etching of the CNT sheets is carried out in a capacitively coupled plasma (CCP) etching system, where the CNT sheets are selectively exposed, in a controlled environment, to oxygen plasma via the shadow mask.

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm.sup.−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10.sup.−4.

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm.sup.−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10.sup.−4.

Disclosed are methods for manufacturing a precursor for a primary preform for optical fibers via an internal plasma deposition process. An exemplary method includes creating a first plasma reaction zone having first reaction conditions in the interior of a hollow substrate tube to deposit non-vitrified silica layers on the inner surface of the hollow substrate tube, and subsequently creating a second plasma reaction zone having second reaction conditions in the interior of the hollow substrate tube to deposit vitrified silica layers on the deposited, non-vitrified silica layers. Thereafter, the hollow substrate tube is removed from the deposited, vitrified silica layers to yield a deposited tube.

Disclosed are methods for manufacturing a precursor for a primary preform for optical fibers via an internal plasma deposition process. An exemplary method includes creating a first plasma reaction zone having first reaction conditions in the interior of a hollow substrate tube to deposit non-vitrified silica layers on the inner surface of the hollow substrate tube, and subsequently creating a second plasma reaction zone having second reaction conditions in the interior of the hollow substrate tube to deposit vitrified silica layers on the deposited, non-vitrified silica layers. Thereafter, the hollow substrate tube is removed from the deposited, vitrified silica layers to yield a deposited tube.

A method of making a transparent conductive graphene hybrid, comprising the steps of providing a PMMA/Graphene hybrid, functionalizing the PMMA/Graphene hybrid, providing a transparent substrate, oxidizing the transparent substrate, treating the oxidized substrate and forming a functionalized substrate, applying the PMMA/Graphene hybrid to the functionalized substrate, removing the PMMA, and forming a transparent conductive graphene hybrid. A transparent conductive graphene hybrid comprising a transparent substrate, wherein the transparent substrate is oxidized, and wherein the transparent substrate is treated with TFPA-NH2 to form a functionalized substrate, and a layer of graphene on the functionalized substrate.

A continuous method for manufacturing graphene films using a metal substrate, wherein a first surface of the metal substrate is heated such that a top layer of the first surface melts to form a molten metal layer, and devices for carrying out the same.

A continuous method for manufacturing graphene films using a metal substrate, wherein a first surface of the metal substrate is heated such that a top layer of the first surface melts to form a molten metal layer, and devices for carrying out the same.