The invention provides a molten Al—Si alloy corrosion resistant composite coating and a preparation method and application thereof. The composite coating layer comprises an aluminized layer and a TiO.sub.2 film layer from a surface of a substrate to the outside in sequence. The preparation method of the coating layer comprises the following steps: (step S1) making a surface treatment to an Fe-based alloy, and then aluminizing with a solid powder penetrant; (step S2) sand-blasting the aluminized Fe-based alloy; (step S3) washing and drying the Fe-based alloy which has been sand-blasted; and (step S4) depositing the TiO.sub.2 film layer on a surface of the dried aluminized Fe-based alloy by using an atom layer vapor deposition. The application of the molten Al—Si alloy corrosion resistant composite coating is used for a solar thermal power generation heat exchange tube.

A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

Disclosed herein is system and method for protective diamond coatings. The method may include the steps of cleaning and seeding a substrate, depositing a crystalline diamond layer on the substrate, etching the substrate; and attaching the substrate to protected matter. The crystalline diamond layer may reflect at least 28 percent of electromagnetic energy in a beam having a bandwidth of 800 nanometer to 1 micrometer.

A method of processing a substrate includes: (a) preparing a substrate having a nitrogen-containing film and an oxygen-containing film on a surface of the substrate; and (b) modifying a surface of the nitrogen-containing film to be nitrided by supplying an active species containing nitrogen and an active species containing hydrogen, or selectively forming hydroxyl group termination on a surface of the oxygen-containing film by supplying at least one selected from the group of an active species containing hydrogen, an active species containing hydrogen and oxygen, and an active species containing hydrogen and nitrogen.

Some embodiments relate to articles having removable coatings. The articles may comprise a substrate and a coating on the substrate. An etch stop layer may be provided between the substrate and the coating to permit removal of the coating without damaging the substrate. Some embodiments relate to methods for removing a coating from an article. The methods may comprise obtaining an article comprising an etch stop layer between a substrate and a coating on the substrate, and removing at least a portion of the coating from the article. Other embodiments further provide articles and related methods.

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A porous thin film includes a framework that includes a plurality of pores. The pores extend from an opening located at an upper surface of the framework to a bottom surface contained in the framework. A pore-coating film is formed on sidewalls and the bottom surface of the pores.

A method and apparatus for creating a flat optical structure is disclosed. The method includes etching at least one trench in a substrate, placing a dielectric material in at least one trench in the substrate and encapsulating the top of the substrate with a film.

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.