Graphene is deposited on a metal surface of a semiconductor substrate at a deposition temperature compatible with back-end-of-line semiconductor processing. The graphene may be annealed at a temperature between the deposition temperature and a temperature sensitive limit of materials in the semiconductor substrate to improve film quality. Alternatively, the graphene may be treated by exposure to plasma with one or more oxidant species. The graphene may be encapsulated with an etch stop layer and hermetic barrier, where the etch stop layer includes a metal oxide deposited under conditions that do not change or that improve the film quality of the graphene. The graphene may be encapsulated with a hermetic barrier, where the hermetic barrier is deposited under conditions that do not damage the graphene.

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO.sub.2), copper (Cu), and low-k dielectric materials.

A film forming method includes preparing a substrate having a first region in which a metal film or an oxide film of the metal film is exposed, and a second region in which an insulating film is exposed, supplying, to the substrate, an organic compound containing, in a head group, a triple bond between carbon atoms represented by Chemical Formula (1) described in the specification, causing the organic compound to be selectively adsorbed in the first region among the first region and the second region, and cleaving the triple bond in the first region and forming a hydrophobic film having a honeycomb structure of carbon atoms through polymerization.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber.

Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber.

Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.

Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.

Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.